Semiconductor devices on misoriented substrates
文献类型：专利
| 作者 | CANEAU CATHERINE G; NISHIYAMA NOBUHIKO; GURYANOV GEORGIY |
| 发表日期 | 2006-10-05 |
| 专利号 | WO2006058040A3 |
| 著作权人 | CORNING INCORPORATED |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor devices on misoriented substrates |
| 英文摘要 | A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240. |
| 公开日期 | 2006-10-05 |
| 申请日期 | 2005-11-21 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/91690]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CORNING INCORPORATED |
| 推荐引用方式 GB/T 7714 | CANEAU CATHERINE G,NISHIYAMA NOBUHIKO,GURYANOV GEORGIY. Semiconductor devices on misoriented substrates. WO2006058040A3. 2006-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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