Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device
文献类型：专利
| 作者 | KWON, O. KYUN; PARK, MI RAN; HAN, WON SEOK; SONG, HYUN WOO |
| 发表日期 | 2007-06-14 |
| 专利号 | US20070134926A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device |
| 英文摘要 | Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained. |
| 公开日期 | 2007-06-14 |
| 申请日期 | 2006-12-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/91765]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | KWON, O. KYUN,PARK, MI RAN,HAN, WON SEOK,et al. Method of etching for multi-layered structure of semiconductors in groups III-V and method for manufacturing vertical cavity surface emitting laser device. US20070134926A1. 2007-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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