中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vertical cavity surface emitting laser

文献类型:专利

作者MAEDA, OSAMU; SHIOZAKI, MASAKI
发表日期2011-03-22
专利号US7912105
著作权人SONY CORPORATION
国家美国
文献子类授权发明
其他题名Vertical cavity surface emitting laser
英文摘要A VCSEL which can be easily manufactured and can selectively suppress only high-order transverse mode oscillation is provided. The VCSEL includes a resonator, a first current confinement layer, and a second current confinement layer. The resonator includes an active layer having a light emitting region, and a pair of first multilayer reflector and a second multilayer reflector provided with the active layer in between, and resonate is generated in a given wavelength. The first current confinement layer has a current injection region is a region corresponding to the light emitting region, and is formed at a region including an antinode of a standing wave. The second current confinement layer has a current injection region with a diameter smaller than a diameter of the first current injection region and is formed at a region including a node standing wave.
公开日期2011-03-22
申请日期2006-12-18
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/91870]  
专题半导体激光器专利数据库
作者单位SONY CORPORATION
推荐引用方式
GB/T 7714
MAEDA, OSAMU,SHIOZAKI, MASAKI. Vertical cavity surface emitting laser. US7912105. 2011-03-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

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