VCSEL with single lasing-reflectivity peak reflector
文献类型：专利
| 作者 | HWANG, WEN-YEN; LIN, CHIH-HSIANG; BAILLARGEON, JAMES N. |
| 发表日期 | 2002-11-07 |
| 专利号 | US20020163952A1 |
| 著作权人 | APPLIED OPTOELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | VCSEL with single lasing-reflectivity peak reflector |
| 英文摘要 | A laser apparatus has a first mirror, a second mirror, at least a portion of which is defined by the first and second mirrors. The laser has an active region located in the laser cavity, which is capable of stimulated emission at one or more wavelengths of light. The second mirror comprises a plurality of dielectric layers arranged in parallel and having a reflectivity band with a peak reflectivity at a peak wavelength, said reflectivity band having a width of less than 1 nm at a reflectivity of 3% less than the peak reflectivity. The laser apparatus may be a tunable laser apparatus in which the peak wavelength of the reflectivity band is adjusted, thereby adjusting the lasing wavelength of the laser. The reflectivity band may be a lasing threshold reflectivity band over which the reflectivity of the second mirror is greater than a lasing threshold reflectivity which is sufficient to permit lasing. |
| 公开日期 | 2002-11-07 |
| 申请日期 | 2001-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/91906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,LIN, CHIH-HSIANG,BAILLARGEON, JAMES N.. VCSEL with single lasing-reflectivity peak reflector. US20020163952A1. 2002-11-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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