InAlAs having enhanced oxidation rate grown under very low V/III ratio
文献类型：专利
| 作者 | KWON, HOKI; WANG, TZU-YU; RYOU, JAE-HYUN; KIM, JIN K.; PARK, GYOUNGWON |
| 发表日期 | 2005-11-03 |
| 专利号 | US20050243881A1 |
| 著作权人 | HONEYWELL INTERNATIONAL INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | InAlAs having enhanced oxidation rate grown under very low V/III ratio |
| 英文摘要 | A current confinement layer of a VCSEL is formed by adjusting flow rates of In-, Al-, and As-containing precursors introduced within a deposition chamber. By maintaining a low ratio between the flow rate of the As-containing precursors and the total flow rate of In- and Al-containing precursors (e.g., less than 25, 10, 5, or 1), a current confinement layer, lattice matched to InP and having an enhanced oxidation rate, may be formed. |
| 公开日期 | 2005-11-03 |
| 申请日期 | 2004-12-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/92711]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HONEYWELL INTERNATIONAL INC. |
| 推荐引用方式 GB/T 7714 | KWON, HOKI,WANG, TZU-YU,RYOU, JAE-HYUN,et al. InAlAs having enhanced oxidation rate grown under very low V/III ratio. US20050243881A1. 2005-11-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。