Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission
文献类型:专利
作者 | MOSER, MICHAEL; EITEL, SVEN; KAISER, WOLFGANG |
发表日期 | 2011-07-21 |
专利号 | US20110176572A1 |
著作权人 | II-VI LASER ENTERPRISE GMBH |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission |
英文摘要 | A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active layer (108) disposed between the DBRs, and an aperture layer (110) disposed either between the DBRs or within one of the DBRs. The aperture layer (110) has a border (116) having an internal boundary with a plurality of indented portions defining one or more apertures. Such a VCSEL is easily manufacturable and provides a narrow bandwidth output, as well as mitigating at least some of the problems of prior art VCSELs. Mesa (102) may be etched to be non-circular and subsequent selective oxidation of aperture layer (110) results in a non-circular current confinement aperture (114) promoting higher-order lateral modes (LP21). |
公开日期 | 2011-07-21 |
申请日期 | 2009-09-30 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/92731] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | II-VI LASER ENTERPRISE GMBH |
推荐引用方式 GB/T 7714 | MOSER, MICHAEL,EITEL, SVEN,KAISER, WOLFGANG. Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission. US20110176572A1. 2011-07-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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