中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission

文献类型:专利

作者MOSER, MICHAEL; EITEL, SVEN; KAISER, WOLFGANG
发表日期2011-07-21
专利号US20110176572A1
著作权人II-VI LASER ENTERPRISE GMBH
国家美国
文献子类发明申请
其他题名Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission
英文摘要A vertical cavity surface emitting laser (VCSEL) (100) has a substrate (104), on which are disposed first and second distributed Bragg reflectors (DBRs) (106, 112), each DBR comprising a stack of layers of alternating refractive index, an active layer (108) disposed between the DBRs, and an aperture layer (110) disposed either between the DBRs or within one of the DBRs. The aperture layer (110) has a border (116) having an internal boundary with a plurality of indented portions defining one or more apertures. Such a VCSEL is easily manufacturable and provides a narrow bandwidth output, as well as mitigating at least some of the problems of prior art VCSELs. Mesa (102) may be etched to be non-circular and subsequent selective oxidation of aperture layer (110) results in a non-circular current confinement aperture (114) promoting higher-order lateral modes (LP21).
公开日期2011-07-21
申请日期2009-09-30
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/92731]  
专题半导体激光器专利数据库
作者单位II-VI LASER ENTERPRISE GMBH
推荐引用方式
GB/T 7714
MOSER, MICHAEL,EITEL, SVEN,KAISER, WOLFGANG. Vcsel with non-circular mesa and current confinement aperture for higher-order lateral mode emission. US20110176572A1. 2011-07-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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