Multiple GaInNAs quantum wells for high power applications
文献类型：专利
| 作者 | HA, WONILL; GAMBIN, VINCENT; HARRIS, JAMES S. |
| 发表日期 | 2006-02-23 |
| 专利号 | US20060039432A1 |
| 著作权人 | NAVY, SECRETARY OF THE UNITED STATES OF AMERICA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple GaInNAs quantum wells for high power applications |
| 英文摘要 | In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths approaching and beyond 3 μm. According to one aspect, a multiple quantum well strain compensated structure is formed using a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. By growing tensile-strained GaNAs barrier layers, a larger active region with multiple quantum wells can be formed increasing the optical gain of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with at least several quantum wells, for example, nine quantum wells, and with room temperature emission approaching and beyond 3 μm. |
| 公开日期 | 2006-02-23 |
| 申请日期 | 2004-12-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/92894]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NAVY, SECRETARY OF THE UNITED STATES OF AMERICA |
| 推荐引用方式 GB/T 7714 | HA, WONILL,GAMBIN, VINCENT,HARRIS, JAMES S.. Multiple GaInNAs quantum wells for high power applications. US20060039432A1. 2006-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。