Vertical cavity surface emitting laser element, semiconductor wafer and light emitting module provided with vertical cavity surface emitting laser element, and method for manufacturing vertical cavity surface emitting laser element
文献类型:专利
作者 | IWATA, KEIJI |
发表日期 | 2015-03-12 |
专利号 | WO2015033633A1 |
著作权人 | MURATA MANUFACTURING CO., LTD. |
国家 | 世界知识产权组织 |
文献子类 | 发明申请 |
其他题名 | Vertical cavity surface emitting laser element, semiconductor wafer and light emitting module provided with vertical cavity surface emitting laser element, and method for manufacturing vertical cavity surface emitting laser element |
英文摘要 | A VCSEL element (100) is provided with: a base substrate (11) having a main surface (111); a light emitting section (71) that is formed on the main surface (111); an anode electrode pad (42); and a transparent resin (61). The light emitting section (71) includes: an active region (150) that generates light; a p-type DBR layer (17) and an n-type DBR layer (13), which are formed such that the layers sandwich the active region (150) in the direction substantially perpendicular to the main surface (111); and a current confining layer (19) that is formed between the active region (150) and the p-type DBR layer (17) or the n-type DBR layer (13). An anode electrode pad (41) is formed on the main surface (111) such that the anode electrode pad is electrically connected to the light emitting section (71). The transparent resin (61) is formed such that the light emitting section (71) is covered with the transparent resin, and at least a part of the anode electrode pad (41) is exposed. |
公开日期 | 2015-03-12 |
申请日期 | 2014-06-05 |
状态 | 未确认 |
源URL | [http://ir.opt.ac.cn/handle/181661/92932] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | MURATA MANUFACTURING CO., LTD. |
推荐引用方式 GB/T 7714 | IWATA, KEIJI. Vertical cavity surface emitting laser element, semiconductor wafer and light emitting module provided with vertical cavity surface emitting laser element, and method for manufacturing vertical cavity surface emitting laser element. WO2015033633A1. 2015-03-12. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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