Vcsel with integral resistive region
文献类型：专利
| 作者 | GUENTER, JAMES K.; PARK, GYOUNGWON |
| 发表日期 | 2011-09-22 |
| 专利号 | US20110228803A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vcsel with integral resistive region |
| 英文摘要 | In one embodiment, a VCSEL includes a plurality of semiconductor layers, an insulative region, a resistive region, and a remainder region. The semiconductor layers include a lower mirror, an active region, and an upper mirror. The active region is disposed over the lower mirror and includes a first lasing region. The upper mirror is disposed over the active region. The insulative region and the resistive region are integrally formed in the semiconductor layers. The remainder region includes the semiconductor layers except for the insulative region and the resistive region integrally formed in the semiconductor layers. The insulative region is disposed between the resistive region and the remainder region. |
| 公开日期 | 2011-09-22 |
| 申请日期 | 2010-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/93031]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | GUENTER, JAMES K.,PARK, GYOUNGWON. Vcsel with integral resistive region. US20110228803A1. 2011-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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