Material system for Bragg reflectors in long wavelength VCSELs
文献类型：专利
| 作者 | KWON, HOKI |
| 发表日期 | 2004-06-24 |
| 专利号 | US20040120375A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Material system for Bragg reflectors in long wavelength VCSELs |
| 英文摘要 | Distributed Bragg reflectors (DBRs), and VCSELs that use such DBRs, comprised of AlP layers on InP substrates. When grown on an InP substrate, if the critical layer thickness (tcrt) of AlP is greater than lambda/4nAlP, where nAlP is the index of refraction of InP and lambda is the wavelength, then the DBR can be grown using alternating layers of InP and AlP, wherein the thickness of the AlP is less than the critical thickness. If the critical layer thickness (tcrt) of AlP is greater than lambda/4nAlP, then the DBR mirror is grown using alternating layers of InP and of an AlP/InP superlattice, wherein the AlP/InP superlattice is comprised of InP and of AlP wherein the thickness of the AlP is less than the critical thickness. |
| 公开日期 | 2004-06-24 |
| 申请日期 | 2002-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/93061]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | KWON, HOKI. Material system for Bragg reflectors in long wavelength VCSELs. US20040120375A1. 2004-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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