Semiconductor device with epitaxially grown active layer adjacent an optically passive region
文献类型：专利
| 作者 | LUKAS CZORNOMAZ; MIRJA RICHTER; HEIKE E. RIEL; JENS HOFRICHTER |
| 发表日期 | 2014-05-07 |
| 专利号 | GB2507513A |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device with epitaxially grown active layer adjacent an optically passive region |
| 英文摘要 | A semiconductor device 1 comprising an optically passive aspect 2, and an optically active material 6, wherein the optically passive aspect 2 is patterned to comprise a photonic crystal structure 4 with a predefined structure 5, and the optically active material 6 is grown in the predefined structure 5 with a layer 7 acting as a seed layer. Any material which exceeds predefined area 5 may be removed by etching or polishing. The optically active material 6 may be crystalline or amorphous and performs light generation, amplification, detection or modulation. The optically passive region 2 may form a wire waveguide 3. A VCSEL may be formed by the optically active material 6. The cross section of the optically passive region 2 may be smaller than or the same size as that of the predefined structure 5, there may be a tapered region between the optically passive region and the structure 5. The photonic crystal may be a 2D crystal. |
| 公开日期 | 2014-05-07 |
| 申请日期 | 2012-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/93111]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | LUKAS CZORNOMAZ,MIRJA RICHTER,HEIKE E. RIEL,et al. Semiconductor device with epitaxially grown active layer adjacent an optically passive region. GB2507513A. 2014-05-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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