Semiconductor laser apparatus and manufacturing method thereof
文献类型：专利
| 作者 | KUWATA, YASUAKI; NAKAYAMA, HIDEO; MURAKAMI, AKEMI; ISHII, RYOJI |
| 发表日期 | 2005-10-27 |
| 专利号 | US20050238076A1 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser apparatus and manufacturing method thereof |
| 英文摘要 | A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively. |
| 公开日期 | 2005-10-27 |
| 申请日期 | 2004-11-02 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/93115]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | KUWATA, YASUAKI,NAKAYAMA, HIDEO,MURAKAMI, AKEMI,et al. Semiconductor laser apparatus and manufacturing method thereof. US20050238076A1. 2005-10-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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