Vertical cavity surface emitting laser with undoped top mirror
文献类型：专利
| 作者 | JOHNSON, RALPH H.; PENNER, R. SCOTT; BIARD, JAMES ROBERT |
| 发表日期 | 2011-04-21 |
| 专利号 | US20110090930A1 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical cavity surface emitting laser with undoped top mirror |
| 英文摘要 | A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer. |
| 公开日期 | 2011-04-21 |
| 申请日期 | 2010-12-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/93168]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | JOHNSON, RALPH H.,PENNER, R. SCOTT,BIARD, JAMES ROBERT. Vertical cavity surface emitting laser with undoped top mirror. US20110090930A1. 2011-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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