Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb 2 Te 3
文献类型:期刊论文
作者 | Jinling Yu ; Kejing Zhu; Xiaolin Zeng; Lei Chen; Yonghai Chen; Yu Liu; Chunming Yin; Shuying Cheng; Yunfeng Lai; Jin Huang; Ke He; Qikun Xue |
刊名 | PHYSICAL REVIEW B |
出版日期 | 2019 |
卷号 | 100页码:235108 |
源URL | [http://ir.semi.ac.cn/handle/172111/29494] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Jinling Yu ; Kejing Zhu; Xiaolin Zeng; Lei Chen; Yonghai Chen; Yu Liu; Chunming Yin; Shuying Cheng; Yunfeng Lai; Jin Huang; Ke He; Qikun Xue. Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb 2 Te 3[J]. PHYSICAL REVIEW B,2019,100:235108. |
APA | Jinling Yu ; Kejing Zhu; Xiaolin Zeng; Lei Chen; Yonghai Chen; Yu Liu; Chunming Yin; Shuying Cheng; Yunfeng Lai; Jin Huang; Ke He; Qikun Xue.(2019).Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb 2 Te 3.PHYSICAL REVIEW B,100,235108. |
MLA | Jinling Yu ; Kejing Zhu; Xiaolin Zeng; Lei Chen; Yonghai Chen; Yu Liu; Chunming Yin; Shuying Cheng; Yunfeng Lai; Jin Huang; Ke He; Qikun Xue."Helicity-dependent photocurrent of the top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators Sb 2 Te 3".PHYSICAL REVIEW B 100(2019):235108. |
入库方式: OAI收割
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。