InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure
文献类型：期刊论文
| 作者 | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2019 |
| 卷号 | 114页码:053509 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29504]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma. InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure[J]. Applied Physics Letters,2019,114:053509. |
| APA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma.(2019).InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure.Applied Physics Letters,114,053509. |
| MLA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Wenjun Huang; Yanhua Zhang; Yulian Cao; Wenquan Ma."InAs/GaSb superlattice resonant tunneling diode photodetector with InAs/AlSb double barrier structure".Applied Physics Letters 114(2019):053509. |
入库方式： OAI收割
来源：半导体研究所
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