Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure
文献类型：期刊论文
| 作者 | Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2019 |
| 卷号 | 41期号:1页码:73-75 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29505]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma. Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure[J]. IEEE Electron Device Letters,2019,41(1):73-75. |
| APA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma.(2019).Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure.IEEE Electron Device Letters,41(1),73-75. |
| MLA | Biying Nie; Jianliang Huang; Chengcheng Zhao; Yanhua Zhang; Wenquan Ma."Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure".IEEE Electron Device Letters 41.1(2019):73-75. |
入库方式： OAI收割
来源：半导体研究所
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