Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
文献类型：期刊论文
| 作者 | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2019 |
| 卷号 | 40期号:5页码:698-701 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29510]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li. Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET[J]. IEEE Electron Device Letters,2019,40(5):698-701. |
| APA | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li.(2019).Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET.IEEE Electron Device Letters,40(5),698-701. |
| MLA | Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li."Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET".IEEE Electron Device Letters 40.5(2019):698-701. |
入库方式： OAI收割
来源：半导体研究所
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