Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
文献类型：期刊论文
| 作者 | Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ; Hui Zhang Pengcheng Tao |
| 刊名 | Electronics
 |
| 出版日期 | 2019 |
| 卷号 | 8页码:241 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29512]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ;Hui Zhang Pengcheng Tao. Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure[J]. Electronics,2019,8:241. |
| APA | Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ;Hui Zhang Pengcheng Tao.(2019).Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure.Electronics,8,241. |
| MLA | Huolin Huang ; Feiyu Li ; Zhonghao Sun ; Nan Sun ; Feng Zhang ; Yaqing Cao ;Hui Zhang Pengcheng Tao."Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure".Electronics 8(2019):241. |
入库方式： OAI收割
来源：半导体研究所
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