Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films
文献类型:期刊论文
作者 | Junhua Meng; Bangming Ming; Xingwang Zhang; Menglei Gao; Likun Cheng; Zhigang Yin; Denggui Wang; Xingxing Li; Jingbi You; Ruzhi Wang |
刊名 | Crystal Growth and Design
![]() |
出版日期 | 2019 |
卷号 | 19期号:1页码:453-459 |
源URL | [http://ir.semi.ac.cn/handle/172111/29514] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Junhua Meng; Bangming Ming; Xingwang Zhang; Menglei Gao; Likun Cheng; Zhigang Yin; Denggui Wang; Xingxing Li; Jingbi You; Ruzhi Wang. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films[J]. Crystal Growth and Design,2019,19(1):453-459. |
APA | Junhua Meng; Bangming Ming; Xingwang Zhang; Menglei Gao; Likun Cheng; Zhigang Yin; Denggui Wang; Xingxing Li; Jingbi You; Ruzhi Wang.(2019).Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films.Crystal Growth and Design,19(1),453-459. |
MLA | Junhua Meng; Bangming Ming; Xingwang Zhang; Menglei Gao; Likun Cheng; Zhigang Yin; Denggui Wang; Xingxing Li; Jingbi You; Ruzhi Wang."Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)/MgO Thin Films".Crystal Growth and Design 19.1(2019):453-459. |
入库方式: OAI收割
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。