The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates
文献类型：期刊论文
| 作者 | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng |
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2019 |
| 卷号 | 507页码:175-179 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29560]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng. The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates[J]. Journal of Crystal Growth,2019,507:175-179. |
| APA | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng.(2019).The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates.Journal of Crystal Growth,507,175-179. |
| MLA | G.G. Yan ; X.F. Liu ; Z.W. Shen ; W.S. Zhao ; L. Wang ; Y.X. Cui ; J.T. Li ; F. Zhang ; G.S. Sun ; Y.P. Zeng."The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates".Journal of Crystal Growth 507(2019):175-179. |
入库方式： OAI收割
来源：半导体研究所
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