Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals
文献类型：期刊论文
| 作者 | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao |
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2019 |
| 卷号 | 526页码:125237 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29565]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao. Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals[J]. Journal of Crystal Growth,2019,526:125237. |
| APA | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao.(2019).Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals.Journal of Crystal Growth,526,125237. |
| MLA | Jing Sun ; Guiying Shen ; Hui Xie ; Jingming Liu ; Ding Yu ; Youwen Zhao."Wet etching generation of dislocation pits with clear facets in LEC-InAs single crystals".Journal of Crystal Growth 526(2019):125237. |
入库方式： OAI收割
来源：半导体研究所
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