AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact
文献类型:期刊论文
作者 | Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang |
刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
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出版日期 | 2019 |
卷号 | 66期号:3页码:1197-1201 |
源URL | [http://ir.semi.ac.cn/handle/172111/29600] ![]() |
专题 | 半导体研究所_固态光电信息技术实验室 |
推荐引用方式 GB/T 7714 | Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(3):1197-1201. |
APA | Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;.(2019).AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(3),1197-1201. |
MLA | Lian Zhang ; Zhe Cheng; Jianping Zeng ; Hongxi Lu; Lifang Jia; Yujie Ai; Yun Zhang;."AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.3(2019):1197-1201. |
入库方式: OAI收割
来源:半导体研究所
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