中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

文献类型:期刊论文

作者Menglei Gao;  Junhua Meng;  Yanan Chen;  Siyuan Ye;  Ye Wang;  Congyu Ding;  Yubo Li;  Zhigang Yin;  Xiangbo Zeng;  Jingbi You;  Peng Jin;  Xingwang Zhang
刊名Journal of Materials Chemistry C
出版日期2019
卷号7期号:47页码:14999-15006
源URL[http://ir.semi.ac.cn/handle/172111/29685]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Menglei Gao;Junhua Meng;Yanan Chen;Siyuan Ye;Ye Wang;Congyu Ding;Yubo Li;Zhigang Yin;Xiangbo Zeng;Jingbi You;Peng Jin;Xingwang Zhang. Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors[J]. Journal of Materials Chemistry C,2019,7(47):14999-15006.
APA Menglei Gao;Junhua Meng;Yanan Chen;Siyuan Ye;Ye Wang;Congyu Ding;Yubo Li;Zhigang Yin;Xiangbo Zeng;Jingbi You;Peng Jin;Xingwang Zhang.(2019).Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors.Journal of Materials Chemistry C,7(47),14999-15006.
MLA Menglei Gao;Junhua Meng;Yanan Chen;Siyuan Ye;Ye Wang;Congyu Ding;Yubo Li;Zhigang Yin;Xiangbo Zeng;Jingbi You;Peng Jin;Xingwang Zhang."Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors".Journal of Materials Chemistry C 7.47(2019):14999-15006.

入库方式: OAI收割

来源:半导体研究所

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