Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride
文献类型：期刊论文
| 作者 | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang |
| 刊名 | Nanoscale
 |
| 出版日期 | 2019 |
| 卷号 | 11期号:19页码:9310-9318 |
| 语种 | 英语 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29721]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang. Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride[J]. Nanoscale,2019,11(19):9310-9318. |
| APA | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang.(2019).Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride.Nanoscale,11(19),9310-9318. |
| MLA | Denggui Wang; Yong Lu; Junhua Meng; Xingwang Zhang; Zhigang Yin; Menglei Gao; Ye Wang; Likun Cheng; Jingbi You ; Jicai Zhang."Remote heteroepitaxy of atomic layered hafnium disulfide on sapphire through hexagonal boron nitride".Nanoscale 11.19(2019):9310-9318. |
入库方式： OAI收割
来源：半导体研究所
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