中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Simulation of magnetic field effects on the MCP gain

文献类型:会议论文

作者Li, L.1,2; Guo, L.1,2; Wei, Y.1,2; Sai, X.1,2; Liu, H.1,2; He, K.1,2; Gou, Y.1,2; Liu, B.1,2; Tian, J.1,2,3; Chen, P.1,2,3
出版日期2020-03
会议日期2019-09-11
会议地点Giessen, GERMANY
关键词Electron multipliers (vacuum) Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Avalanche-induced secondary effects Photon detectors for UV, visible and IR photons (vacuum) (photomultipliers, HPDs, others)
卷号15
期号3
DOI10.1088/1748-0221/15/03/C03048
英文摘要

A multi-anode microchannel plate photomultiplier (Ma MCP-PMT) is an appropriate photo sensor for particle identification in high energy physics experiments such as PANDA, Belle II, etc. Since these detectors usually work in a strong magnetic field, the sensors must be immune to the field. In this article, the effects of the magnetic field on the conventional MCP and the atomic layer deposited MCP (ALD-MCP) are studied by simulating the electron multiplication in the microchannel of the MCP. Simulation results show that the gain of conventional MCP-PMTs increases a little before it starts decreasing while the magnetic field is further increasing. We found that the shortening of electronic trajectories and the reduction of secondary electrons mainly contribute to gain variations of a conventional MCP. For the ALD-MCP that usually has higher secondary emission yields, it is found that high re-diffusion secondary electron yields could make it more vulnerable to magnetic fields.

产权排序1
会议录JOURNAL OF INSTRUMENTATION
会议录出版者IOP PUBLISHING LTD
语种英语
ISSN号1748-0221
WOS记录号WOS:000528039600048
源URL[http://ir.opt.ac.cn/handle/181661/93407]  
专题条纹相机工程中心
作者单位1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, 17 Informat Ave,New Ind Pk, Xian 710119, SN, Peoples R China
2.Univ Chinese Acad Sci CAS, 19 Yuquan Rd, Beijing 100049, Peoples R China
3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, 92 Wucheng Rd, Taiyuan 030006, Shanxi, Peoples R China
推荐引用方式
GB/T 7714
Li, L.,Guo, L.,Wei, Y.,et al. Simulation of magnetic field effects on the MCP gain[C]. 见:. Giessen, GERMANY. 2019-09-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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