Simulation of magnetic field effects on the MCP gain
文献类型:会议论文
作者 | Li, L.1,2![]() ![]() ![]() ![]() |
出版日期 | 2020-03 |
会议日期 | 2019-09-11 |
会议地点 | Giessen, GERMANY |
关键词 | Electron multipliers (vacuum) Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc) Avalanche-induced secondary effects Photon detectors for UV, visible and IR photons (vacuum) (photomultipliers, HPDs, others) |
卷号 | 15 |
期号 | 3 |
DOI | 10.1088/1748-0221/15/03/C03048 |
英文摘要 | A multi-anode microchannel plate photomultiplier (Ma MCP-PMT) is an appropriate photo sensor for particle identification in high energy physics experiments such as PANDA, Belle II, etc. Since these detectors usually work in a strong magnetic field, the sensors must be immune to the field. In this article, the effects of the magnetic field on the conventional MCP and the atomic layer deposited MCP (ALD-MCP) are studied by simulating the electron multiplication in the microchannel of the MCP. Simulation results show that the gain of conventional MCP-PMTs increases a little before it starts decreasing while the magnetic field is further increasing. We found that the shortening of electronic trajectories and the reduction of secondary electrons mainly contribute to gain variations of a conventional MCP. For the ALD-MCP that usually has higher secondary emission yields, it is found that high re-diffusion secondary electron yields could make it more vulnerable to magnetic fields. |
产权排序 | 1 |
会议录 | JOURNAL OF INSTRUMENTATION
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会议录出版者 | IOP PUBLISHING LTD |
语种 | 英语 |
ISSN号 | 1748-0221 |
WOS记录号 | WOS:000528039600048 |
源URL | [http://ir.opt.ac.cn/handle/181661/93407] ![]() |
专题 | 条纹相机工程中心 |
作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, 17 Informat Ave,New Ind Pk, Xian 710119, SN, Peoples R China 2.Univ Chinese Acad Sci CAS, 19 Yuquan Rd, Beijing 100049, Peoples R China 3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, 92 Wucheng Rd, Taiyuan 030006, Shanxi, Peoples R China |
推荐引用方式 GB/T 7714 | Li, L.,Guo, L.,Wei, Y.,et al. Simulation of magnetic field effects on the MCP gain[C]. 见:. Giessen, GERMANY. 2019-09-11. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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