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Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics

文献类型：期刊论文

作者Zhao, Jie2,3; Shen, Lijun4,5; Liu, Fang2,3; Zhao, Pan1,4; Huang, Qi2,3; Han, Hua4,5; Peng, Lianmao2,3; Liang, Xuelei2,3
刊名NANO RESEARCH
出版日期2020-05-15
页码7
ISSN号1998-0124
关键词carbon nanotube thin films quality metrology local anisotropy transistors
DOI10.1007/s12274-020-2801-1
通讯作者Liang, Xuelei(liangxl@pku.edu.cn)
英文摘要Large area, highly uniform, and density controllable carbon nanotube (CNT) films, either well-aligned or random network, are required for practical application of CNT-based electronics. Mass production methods for such CNT films and corresponding quality metrology, which are critical for pushing the CNT-based transistor technology to manufacturing, should be developed in advance. Much progress has been made on fabrication of CNT films; however, there still lacks a metrology for thoroughly quantifying their quality until now. In this paper, through comparing study of CNT films fabricated by dip-coating (DC) and direct deposition (DD) methods, local anisotropy in the film is revealed to impact the performance uniformity of devices so fabricated in a spatial scale dependent manner. The anisotropy effect should be taken into account for the quality characterization of CNT films, which was not noticed in previous studies. Based on these findings, we propose a four-parameter metrology to quantify the overall quality of the CNT films, which includes the local tube density (D-L), global density uniformity (C-v), local degree of order (O-L), and the relative tube proportion in a certain orientation (P-theta) at a location. The four-parameter characterization and corresponding device performance confirm DC films are superior to DD films for practical application. The four-parameter metrology is not only powerful for overall quality evaluation of CNT films, but also able to predict the fluctuation of devices' performance. Therefore, this material metrology is important for devices and circuits design and valuable for pushing the CNT-based transistor technology forward.
WOS关键词SELECTIVE DISPERSION ; TRANSISTORS ; ALIGNMENT ; MECHANISM ; NETWORKS
资助项目National Key Research and Development Program[2016YFA0201902] ; National Natural Science Foundation of China[61621061] ; National Natural Science Foundation of China[51991341] ; Instrument Function Development Innovation Program of Chinese Academy of Sciences[282019000057] ; Special Program of Beijing Municipal Science & Technology Commission[Z181100000118002] ; Special Program of Beijing Municipal Science & Technology Commission[Z181100003818001]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
出版者TSINGHUA UNIV PRESS
WOS记录号WOS:000533033200001
资助机构National Key Research and Development Program ; National Natural Science Foundation of China ; Instrument Function Development Innovation Program of Chinese Academy of Sciences ; Special Program of Beijing Municipal Science & Technology Commission
源URL[http://ir.ia.ac.cn/handle/173211/39470]  
专题类脑智能研究中心_微观重建与智能分析
通讯作者Liang, Xuelei
作者单位1.Harbin Univ Sci & Technol, Inst Automat, Harbin 150080, Peoples R China
2.Peking Univ, Ctr Carbon Based Elect, Beijing 100871, Peoples R China
3.Peking Univ, Dept Elect, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
4.Chinese Acad Sci, Inst Automat, Natl Lab Pattern Recognit, Beijing 100190, Peoples R China
5.Univ Chinese Acad Sci, Sch Future Technol, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Zhao, Jie,Shen, Lijun,Liu, Fang,et al. Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics[J]. NANO RESEARCH,2020:7.
APA Zhao, Jie.,Shen, Lijun.,Liu, Fang.,Zhao, Pan.,Huang, Qi.,...&Liang, Xuelei.(2020).Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics.NANO RESEARCH,7.
MLA Zhao, Jie,et al."Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics".NANO RESEARCH (2020):7.

入库方式： OAI收割

来源：自动化研究所

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