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Wetting behavior and reaction mechanism of molten Si in contact with silica substrate

文献类型：期刊论文

作者Wang, Qinghu1; He, Gang2; Deng, Shuxiang2; Liu, Jun1; Li, Xiaoyu3; Li, Jianqiang3; Li, Yawei1; Li, Jiangtao2
刊名CERAMICS INTERNATIONAL
出版日期2019-12-01
卷号45期号:17页码:21365-21372
关键词Wetting behavior Reaction mechanism Multicrystalline silicon SiO2 substrate
ISSN号0272-8842
DOI10.1016/j.ceramint.2019.07.123
英文摘要The photovoltaic silicon ingot is currently grown in silica (SiO2) crucible. However, adhesion between Si ingot and SiO2 crucible occurred frequently, leading to cracking in Si ingot. To solve these problems, it is important to understand the Si/SiO2 interfacial wetting behavior and reaction mechanism at high temperature. In this paper, the sessile drop technology and microstructural analysis method were used to study the Si/SiO2 interfacial wetting behavior and reaction mechanism at high temperature. The results show that the contact angle of Si drop on SiO2 substrate is 83.5 +/- 2 degrees. The interfacial reaction occurs between Si melt and SiO2 substrate at high temperature, causing uneven surface of substrate with many grooves. The Si melt fills grooves at high temperature and expands during solidification, which results in interlock structure and adhesion at Si/SiO(2 )interface. Finally, adhesion and cracking phenomena are interpreted by analytical models.
WOS关键词SESSILE DROP ; CRISTOBALITE CRYSTALLIZATION ; WETTABILITY ; EVAPORATION ; INTERFACE ; ALUMINA ; CARBON ; STEEL ; MGO
资助项目National Natural Science Foundation of China[51572268] ; National Natural Science Foundation of China[51702240] ; National Natural Science Foundation of China[51702331] ; National Natural Science Foundation of China[51674232] ; National Key Research and Development Program of China[2017YFB0310303]
WOS研究方向Materials Science
语种英语
WOS记录号WOS:000493212500038
出版者ELSEVIER SCI LTD
资助机构National Natural Science Foundation of China ; National Key Research and Development Program of China
源URL[http://ir.ipe.ac.cn/handle/122111/39123]  
专题中国科学院过程工程研究所
通讯作者Wang, Qinghu; He, Gang
作者单位1.Wuhan Univ Sci & Technol, State Key Lab Refractories & Met, Natl Prov Joint Engn Res Ctr High Temp Mat & Lini, Wuhan 430081, Hubei, Peoples R China
2.Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Natl Engn Lab Hydrometallurg Cleaner Prod Technol, CAS Key Lab Green Proc & Engn, Inst Proc Engn, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Qinghu,He, Gang,Deng, Shuxiang,et al. Wetting behavior and reaction mechanism of molten Si in contact with silica substrate[J]. CERAMICS INTERNATIONAL,2019,45(17):21365-21372.
APA Wang, Qinghu.,He, Gang.,Deng, Shuxiang.,Liu, Jun.,Li, Xiaoyu.,...&Li, Jiangtao.(2019).Wetting behavior and reaction mechanism of molten Si in contact with silica substrate.CERAMICS INTERNATIONAL,45(17),21365-21372.
MLA Wang, Qinghu,et al."Wetting behavior and reaction mechanism of molten Si in contact with silica substrate".CERAMICS INTERNATIONAL 45.17(2019):21365-21372.

入库方式： OAI收割

来源：过程工程研究所

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