Ultra-high average figure of merit in synergistic band engineered SnxNa1-xSe0.9S0.1 single crystals
文献类型：期刊论文
| 作者 | Peng, Kunling3,4; Zhang, Bin5; Wu, Hong3,4; Cao, Xianlong1; Li, Ang5; Yang, Dingfeng5; Lu, Xu3; Wang, Guoyu4 ; Han, Xiaodong5; Uher, Ctirad2
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| 刊名 | MATERIALS TODAY
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| 出版日期 | 2018-06-01 |
| 卷号 | 21期号:5页码:501-507 |
| ISSN号 | 1369-7021 |
| DOI | 10.1016/j.mattod.2017.11 |
| 通讯作者 | Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) |
| 英文摘要 | Thermal-electricity conversion is one of the most promising routes to harvest heat and convert it as easily storable and deliverable electric energy. Significant progress has been made since the discovery of Seebeck effect in 1821, particularly, the figure of merit zT approached a record high value of 2.6 in 2014. However, for thermoelectric devices, high average zT values (zT(ave)) over the operating temperature range is more important as it is directly related to the conversion efficiency (eta). Approaching highly stable and repeatable ultra-high zT(ave) for Te-free materials has been historically challenging over the past century though exciting progress with zT(ave) well above 1.10 was made recently. Here, through synergistic band engineering strategy for single crystalline SnSe, we report a series of record high zT(ave) over a wide temperature range, approaching similar to 1.60 in the range from 300 K to 923 K in Na-doped SnSe0.9S0.1 solid solution single crystals, with the maximum zT of 2.3 at 773 K. These ultra-high thermoelectric performance derive from the new multiple valence band extrema near the band edges in SnSe0.9S0.1 and the shift of Fermi level towards the multi-valley bands through Na doping which introduce additional carrier pockets to attend electrical transport. These effects result in an optimized ultrahigh power factor exceeding 4.0 mW m(-1) K-2 in Sn0.97Na0.03Se0.9S0.1 single crystals. Combined with the extremely lowered thermal conductivity attributed from the intrinsic anhar-monicity and point defect phonon scattering, the series of ultra-high zT(ave) and a record high calculated conversion efficiency of 21% over a wide temperature range are approached. |
| 资助项目 | National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[11604032] ; National Natural Science Foundation of China[51472036] ; National Natural Science Foundation of China[51672270] ; Fundamental Research Funds for the Central Universities[106112016CDJZR308808] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH016] ; Project for Fundamental and Frontier Research in Chongqing[CSTC2015JCYJBX0026] ; Natural Science Foundation Project of Chongqing[CSTC2015JCY-JA50003] ; Achievement Transfer Program of Institutions of Higher Education in Chongqing[KJZH17136] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000438779000017 |
| 出版者 | ELSEVIER SCI LTD |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/9720]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Zhou, Xiaoyuan |
| 作者单位 | 1.Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China 2.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA 3.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 4.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 5.Beijing Univ Technol, Beijing Key Lab Microstruct & Property Adv Mat, Beijing 100024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, Kunling,Zhang, Bin,Wu, Hong,et al. Ultra-high average figure of merit in synergistic band engineered SnxNa1-xSe0.9S0.1 single crystals[J]. MATERIALS TODAY,2018,21(5):501-507. |
| APA | Peng, Kunling.,Zhang, Bin.,Wu, Hong.,Cao, Xianlong.,Li, Ang.,...&Zhou, Xiaoyuan.(2018).Ultra-high average figure of merit in synergistic band engineered SnxNa1-xSe0.9S0.1 single crystals.MATERIALS TODAY,21(5),501-507. |
| MLA | Peng, Kunling,et al."Ultra-high average figure of merit in synergistic band engineered SnxNa1-xSe0.9S0.1 single crystals".MATERIALS TODAY 21.5(2018):501-507. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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