中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 重庆绿色智能技术研究院
  3. 中国科学院重庆绿色智能技术研究院
Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline

文献类型：期刊论文

作者Alsharafi, Rashed2; Zhan, Heng2; Shaheen, Nusrat2; Lu, Xu2; Wang, Guoyu1; Sun, Xiaonan2; Zhou, Xiaoyuan2
刊名Journal of Electronic Materials
出版日期2017
卷号46期号:5页码:3131-3136
ISSN号03615235
DOI10.1007/s11664-016-5218-6
英文摘要Indium selenides have been considered as highly efficient thermoelectric materials due to their excellent electrical and thermal properties. Herein, we report the effect of Se vacancy on the thermoelectric performance of Pb-doped In4Pb0.01Se3−x polycrystalline (x = 0, 0.03, 0.07, and 0.1) synthesized by solid state reaction followed by spark plasma sintering. The obtained products are characterized by x-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. Owing to the increase of Se vacancy in Pb-doped compounds, the electrical resistivity is reduced by increasing carrier concentration along with the reduction of the lattice thermal conductivity. Ultimately, the In4Pb0.01Se3−x (x = 0.07) exhibits a high ZT value of 0.95 at 690 K. © 2017, The Minerals, Metals & Materials Society.
电子版国际标准刊号1543186X
语种英语
源URL[http://119.78.100.138/handle/2HOD01W0/9806]  
专题中国科学院重庆绿色智能技术研究院
作者单位1.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Science, Chongqing; 400714, China
2.Department of Applied Physics, Chongqing University, Chongqing; 400044, China;
推荐引用方式
GB/T 7714		 Alsharafi, Rashed,Zhan, Heng,Shaheen, Nusrat,et al. Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline[J]. Journal of Electronic Materials,2017,46(5):3131-3136.
APA Alsharafi, Rashed.,Zhan, Heng.,Shaheen, Nusrat.,Lu, Xu.,Wang, Guoyu.,...&Zhou, Xiaoyuan.(2017).Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline.Journal of Electronic Materials,46(5),3131-3136.
MLA Alsharafi, Rashed,et al."Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3−x Polycrystalline".Journal of Electronic Materials 46.5(2017):3131-3136.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。