Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance
文献类型:期刊论文
作者 | Cai, Zhengwei2; Guo, Lijie2; Xu, Xiaolong2; Yan, Yanci2; Peng, Kunling2; Wang, Guiwen1,2; Wang, Guoyu1![]() |
刊名 | Journal of Electronic Materials
![]() |
出版日期 | 2016 |
卷号 | 45期号:3页码:1441-1446 |
ISSN号 | 03615235 |
DOI | 10.1007/s11664-015-4061-5 |
英文摘要 | We report the effect of Sn doping on the thermoelectric performance of (Bi0.25Sb0.75)2−xSnxTe3 compounds (x = 0, 0.005, 0.01, 0.05, 0.1, 0.2) synthesized by the melting method followed by high-energy ball milling and spark plasma sintering. As indicated by transmission electron microscopy and scanning electron microscopy images, layered structure and inhomogeneous nanostructures are present in (Bi0.25Sb0.75)2−xSnxTe3. It is found that Sn doping dramatically reduces the thermal conductivity together with a minor decline in the electrical conductivity, yielding a net enhancement of the figure of merit (ZT). The highest ZT value is approximately 1.03 at 338 K when x is 0.01, an increase of 28.4% compared with the pure sample. © 2015, The Minerals, Metals & Materials Society. |
电子版国际标准刊号 | 1543186X |
语种 | 英语 |
源URL | [http://119.78.100.138/handle/2HOD01W0/9884] ![]() |
专题 | 中国科学院重庆绿色智能技术研究院 |
作者单位 | 1.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing; 400714, China 2.College of Physics, Chongqing University, Chongqing; 401331, China; |
推荐引用方式 GB/T 7714 | Cai, Zhengwei,Guo, Lijie,Xu, Xiaolong,et al. Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance[J]. Journal of Electronic Materials,2016,45(3):1441-1446. |
APA | Cai, Zhengwei.,Guo, Lijie.,Xu, Xiaolong.,Yan, Yanci.,Peng, Kunling.,...&Zhou, Xiaoyuan.(2016).Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance.Journal of Electronic Materials,45(3),1441-1446. |
MLA | Cai, Zhengwei,et al."Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance".Journal of Electronic Materials 45.3(2016):1441-1446. |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。