中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance

文献类型:期刊论文

作者Cai, Zhengwei2; Guo, Lijie2; Xu, Xiaolong2; Yan, Yanci2; Peng, Kunling2; Wang, Guiwen1,2; Wang, Guoyu1; Zhou, Xiaoyuan2
刊名Journal of Electronic Materials
出版日期2016
卷号45期号:3页码:1441-1446
ISSN号03615235
DOI10.1007/s11664-015-4061-5
英文摘要We report the effect of Sn doping on the thermoelectric performance of (Bi0.25Sb0.75)2−xSnxTe3 compounds (x = 0, 0.005, 0.01, 0.05, 0.1, 0.2) synthesized by the melting method followed by high-energy ball milling and spark plasma sintering. As indicated by transmission electron microscopy and scanning electron microscopy images, layered structure and inhomogeneous nanostructures are present in (Bi0.25Sb0.75)2−xSnxTe3. It is found that Sn doping dramatically reduces the thermal conductivity together with a minor decline in the electrical conductivity, yielding a net enhancement of the figure of merit (ZT). The highest ZT value is approximately 1.03 at 338 K when x is 0.01, an increase of 28.4% compared with the pure sample. © 2015, The Minerals, Metals & Materials Society.
电子版国际标准刊号1543186X
语种英语
源URL[http://119.78.100.138/handle/2HOD01W0/9884]  
专题中国科学院重庆绿色智能技术研究院
作者单位1.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing; 400714, China
2.College of Physics, Chongqing University, Chongqing; 401331, China;
推荐引用方式
GB/T 7714
Cai, Zhengwei,Guo, Lijie,Xu, Xiaolong,et al. Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance[J]. Journal of Electronic Materials,2016,45(3):1441-1446.
APA Cai, Zhengwei.,Guo, Lijie.,Xu, Xiaolong.,Yan, Yanci.,Peng, Kunling.,...&Zhou, Xiaoyuan.(2016).Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance.Journal of Electronic Materials,45(3),1441-1446.
MLA Cai, Zhengwei,et al."Effect of Sn Doping in (Bi0.25Sb0.75)2−xSnxTe3 (0 ≤ x ≤ 0.1) on Thermoelectric Performance".Journal of Electronic Materials 45.3(2016):1441-1446.

入库方式: OAI收割

来源:重庆绿色智能技术研究院

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