Defect-induced magnetism in SiC probed by nuclear magnetic resonance
文献类型:期刊论文
作者 | Z. T. Zhang1,3![]() |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2017-02-08 |
语种 | 英语 |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/92752] ![]() |
专题 | 合肥物质科学研究院_中科院强磁场科学中心 |
通讯作者 | Z. T. Zhang; H. K¨uhne |
作者单位 | 1.Hochfeld-Magnetlabor Dresden (HLD-EMFL), Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany 2.TU Dresden, D-01062 Dresden, Germany 3.Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden, Germany 4.School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’ an 710071, China |
推荐引用方式 GB/T 7714 | Z. T. Zhang,D. Dmytriieva,S. Molatta,et al. Defect-induced magnetism in SiC probed by nuclear magnetic resonance[J]. PHYSICAL REVIEW B,2017. |
APA | Z. T. Zhang.,D. Dmytriieva.,S. Molatta.,J. Wosnitza.,Yutian Wang.,...&H. K¨uhne.(2017).Defect-induced magnetism in SiC probed by nuclear magnetic resonance.PHYSICAL REVIEW B. |
MLA | Z. T. Zhang,et al."Defect-induced magnetism in SiC probed by nuclear magnetic resonance".PHYSICAL REVIEW B (2017). |
入库方式: OAI收割
来源:合肥物质科学研究院
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