Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films
文献类型:期刊论文
作者 | Lin, Guankai1; Wang, Haoru1; Cai, Xuhui1; Tong, Wei2; Zhu, Hong1,3 |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER |
出版日期 | 2020-10-07 |
卷号 | 32 |
ISSN号 | 0953-8984 |
关键词 | manganite thin film electroresistance oxygen deficiency grain boundary |
DOI | 10.1088/1361-648X/aba290 |
通讯作者 | Zhu, Hong(zhuh@ustc.edu.cn) |
英文摘要 | Electroresistance (ER) has been intensively studied in low- and intermediate-bandwidth manganites, which possess phase separation characteristics. As for the Sr- and Ba-doped large-bandwidth manganites, however, few results about ER have been reported so far. Here we report ER effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films, which were obtained by applying a large electric current (33 mA) to the pristine films in vacuum. While the pristine film displays a negligible change in resistivity with respect to the test current, the oxygen-deficient film shows significant ER effect, i.e. ER ratio of -22% at 260 K under a test current of 0.3 mA. By gradually restoring oxygen content in the films, it is found that the ER effect is closely related to the residual resistivity at low temperatures, demonstrating the key role of grain boundaries. Furthermore, the residual resistivity can readily be tuned by heating the oxygen-deficient films in air, suggesting strong oxygen activity in the grain boundaries. The magnetoresistance (MR) data show current dependent feature, also revealing the role of grain boundaries. At 40 K, the MR ratio of the 100 degrees C restored film under 30 kOe increases from -15% to -25% when decreasing the test current from 1 to 10(-3)mA. The large ER effect in the oxygen-deficient films is discussed based upon the conductive filament picture in grain boundaries. Our approach to controlling the ER effect through oxygen deficiency makes oxide films more promising for potential applications in the memristive devices and neuomorphic computing. |
WOS关键词 | MAGNETORESISTANCE ; TRANSPORT |
资助项目 | National Natural Science Foundation of China[11674298] ; National Key Research and Development Program of China[2017YFA0403502] ; Users with Excellence Project of Hefei Science Center CAS[2018HSC-UE013] |
WOS研究方向 | Physics |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000556824300001 |
资助机构 | National Natural Science Foundation of China ; National Key Research and Development Program of China ; Users with Excellence Project of Hefei Science Center CAS |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/44853] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Zhu, Hong |
作者单位 | 1.Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Chinese Acad Sci, Key Lab Strongly Coupled Quantum Matter Phys, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Lin, Guankai,Wang, Haoru,Cai, Xuhui,et al. Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2020,32. |
APA | Lin, Guankai,Wang, Haoru,Cai, Xuhui,Tong, Wei,&Zhu, Hong.(2020).Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films.JOURNAL OF PHYSICS-CONDENSED MATTER,32. |
MLA | Lin, Guankai,et al."Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films".JOURNAL OF PHYSICS-CONDENSED MATTER 32(2020). |
入库方式: OAI收割
来源:合肥物质科学研究院
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