中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films

文献类型:期刊论文

作者Lin, Guankai1; Wang, Haoru1; Cai, Xuhui1; Tong, Wei2; Zhu, Hong1,3
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期2020-10-07
卷号32
ISSN号0953-8984
关键词manganite thin film electroresistance oxygen deficiency grain boundary
DOI10.1088/1361-648X/aba290
通讯作者Zhu, Hong(zhuh@ustc.edu.cn)
英文摘要Electroresistance (ER) has been intensively studied in low- and intermediate-bandwidth manganites, which possess phase separation characteristics. As for the Sr- and Ba-doped large-bandwidth manganites, however, few results about ER have been reported so far. Here we report ER effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films, which were obtained by applying a large electric current (33 mA) to the pristine films in vacuum. While the pristine film displays a negligible change in resistivity with respect to the test current, the oxygen-deficient film shows significant ER effect, i.e. ER ratio of -22% at 260 K under a test current of 0.3 mA. By gradually restoring oxygen content in the films, it is found that the ER effect is closely related to the residual resistivity at low temperatures, demonstrating the key role of grain boundaries. Furthermore, the residual resistivity can readily be tuned by heating the oxygen-deficient films in air, suggesting strong oxygen activity in the grain boundaries. The magnetoresistance (MR) data show current dependent feature, also revealing the role of grain boundaries. At 40 K, the MR ratio of the 100 degrees C restored film under 30 kOe increases from -15% to -25% when decreasing the test current from 1 to 10(-3)mA. The large ER effect in the oxygen-deficient films is discussed based upon the conductive filament picture in grain boundaries. Our approach to controlling the ER effect through oxygen deficiency makes oxide films more promising for potential applications in the memristive devices and neuomorphic computing.
WOS关键词MAGNETORESISTANCE ; TRANSPORT
资助项目National Natural Science Foundation of China[11674298] ; National Key Research and Development Program of China[2017YFA0403502] ; Users with Excellence Project of Hefei Science Center CAS[2018HSC-UE013]
WOS研究方向Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000556824300001
资助机构National Natural Science Foundation of China ; National Key Research and Development Program of China ; Users with Excellence Project of Hefei Science Center CAS
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/44853]  
专题中国科学院合肥物质科学研究院
通讯作者Zhu, Hong
作者单位1.Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China
3.Chinese Acad Sci, Key Lab Strongly Coupled Quantum Matter Phys, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714
Lin, Guankai,Wang, Haoru,Cai, Xuhui,et al. Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2020,32.
APA Lin, Guankai,Wang, Haoru,Cai, Xuhui,Tong, Wei,&Zhu, Hong.(2020).Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films.JOURNAL OF PHYSICS-CONDENSED MATTER,32.
MLA Lin, Guankai,et al."Electroresistance effect in oxygen-deficient La(0.8)Ba(0.2)MnO(3-delta)thin films".JOURNAL OF PHYSICS-CONDENSED MATTER 32(2020).

入库方式: OAI收割

来源:合肥物质科学研究院

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