中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions

文献类型:期刊论文

作者Jabar, Bushra1,2; Qin, Xiaoying1; Mansoor, Adil1; Ming, Hongwei1,2; Huang, LuLu1,2; Zhang, Jian1; Danish, Mazhar Hussain1,2; Li, Di1; Zhu, Chen1,2; Zhang, Jinhua1,2
刊名COMPOSITES PART B-ENGINEERING
出版日期2020-09-15
卷号197
ISSN号1359-8368
关键词Thermoelectric material Bi2Te2.7Se0.3 Sn doping Hot pressing Figure of merit
DOI10.1016/j.compositesb.2020.108151
通讯作者Qin, Xiaoying(xyqin@issp.ac.cn) ; Zhang, Jian() ; Li, Di()
英文摘要

Although n-type Bi2Te3-based alloys are state-of-the-art thermoelectric material, their efficiency is still too low to satisfy its wide applications. Hence, it is imperative to improve the thermoelectric performance of n-type Bi2Te2.7Se0.3 (BTS). Here, we show that through a facile method of Sn addition in BTS a new SnxBi2Te2.7Se0.3 based nanocomposite embedded with in-situ formed SnBi and Te nanoinclusions ((SnBi + Te)/SnxBi2Te2.7Se0.3) is constructed, and its thermoelectric performance is enhanced substantially as compared to pristine BTS. Specifically, addition of 0.2 wt% of Sn in BTS causes 38% increase in power factor (PF) and 40% reduction in lattice thermal conductivity. The increased PF mainly comes from elevated Seebeck coefficient due to intensified energy dependent electron scattering caused by the interface potentials; while the reduced thermal conductivity originates from enhanced phonon scattering by the embedded nanoinclusions. Consequently, both high maximum figure of merit ZT (ZT(max) = 1.11 at similar to 370 K) and large average ZT (ZT(ave) = 1.03 at T = 300 K-500 K) are achieved for this sample, which are respectively 76% and 80% higher than those of BTS studied here.

WOS关键词HETEROJUNCTION POTENTIALS ; BI2TE3 ; SCATTERING ; CUI
资助项目Natural Science Foundation of China[11674322] ; Natural Science Foundation of China[51672278] ; Natural Science Foundation of China[51972307]
WOS研究方向Engineering ; Materials Science
语种英语
出版者ELSEVIER SCI LTD
WOS记录号WOS:000564322100002
资助机构Natural Science Foundation of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/70377]  
专题中国科学院合肥物质科学研究院
通讯作者Qin, Xiaoying; Zhang, Jian; Li, Di
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
推荐引用方式
GB/T 7714
Jabar, Bushra,Qin, Xiaoying,Mansoor, Adil,et al. Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions[J]. COMPOSITES PART B-ENGINEERING,2020,197.
APA Jabar, Bushra.,Qin, Xiaoying.,Mansoor, Adil.,Ming, Hongwei.,Huang, LuLu.,...&Song, Chunjun.(2020).Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions.COMPOSITES PART B-ENGINEERING,197.
MLA Jabar, Bushra,et al."Enhanced thermoelectric performance of n-type SnxBi2Te2.7Se0.3 based composites embedded with in-situ formed SnBi and Te nanoinclusions".COMPOSITES PART B-ENGINEERING 197(2020).

入库方式: OAI收割

来源:合肥物质科学研究院

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