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Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions

文献类型：期刊论文

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作者Zhang, Jinhua1,2,3; Ming, Hongwei1,2; Li, Di1; Qin, Xiaoying1; Zhang, Jian1; Huang, Lulu1,2; Song, Chunjun1; Wang, Ling1
刊名ACS APPLIED MATERIALS & INTERFACES ; ACS APPLIED MATERIALS & INTERFACES
出版日期2020-08-19 ; 2020-08-19
卷号12
关键词thermoelectric material thermoelectric material Bi2Te2.7Se0.3 Bi2Te2.7Se0.3 ultralow lattice thermal conductivity ultralow lattice thermal conductivity energy dependent carrier scattering energy dependent carrier scattering nanocomposites nanocomposites
ISSN号1944-8244 ; 1944-8244
DOI10.1021/acsami.0c09338 ; 10.1021/acsami.0c09338
通讯作者Li, Di(lidi@issp.au.cn) ; Li, Di(lidi@issp.au.cn) ; Qin, Xiaoying(xyqin@issp.ac.cn) ; Qin, Xiaoying(xyqin@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn)
英文摘要Bi2Te2.7Se0.3 (BTS) is known to be the unique n-type commercial thermoelectric (TE) alloy used at room temperatures, but its figure of merit (ZT) is relatively low, and it is vital to improve its ZT for its wide applications. Here, we show that incorporation of an appropriate amount of GaAs nanoparticles in BTS not only causes the large enhancement of Seebeck coefficients because of energy-dependent carrier scattering, but also gives rise to drastic reduction of lattice thermal conductivity kappa(L). Specifically, ultralow kappa(L) similar to 0.27W m(-1) K-1 (at 300 K) is achieved for the composite sample incorporated with a 0.3 wt % GaAs nanophase, which is proved to originate mainly from the intensified phonon scattering by the GaAs nanoinclusions and interfaces between the GaAs and BTS matrix. As a result, a maximum ZT = 1.19 (similar to 372 K) and an average ZT(ave) = 1.01 (at T = 300-550 K) are reached in the composite sample with 0.3 wt % GaAs nanoinclusions, which are respectively similar to 78% and similar to 82% larger than those of the BTS matrix in this study, demonstrating that incorporation of the GaAs nanophase is an effective way to improve TE performance of BTS.; Bi2Te2.7Se0.3 (BTS) is known to be the unique n-type commercial thermoelectric (TE) alloy used at room temperatures, but its figure of merit (ZT) is relatively low, and it is vital to improve its ZT for its wide applications. Here, we show that incorporation of an appropriate amount of GaAs nanoparticles in BTS not only causes the large enhancement of Seebeck coefficients because of energy-dependent carrier scattering, but also gives rise to drastic reduction of lattice thermal conductivity kappa(L). Specifically, ultralow kappa(L) similar to 0.27W m(-1) K-1 (at 300 K) is achieved for the composite sample incorporated with a 0.3 wt % GaAs nanophase, which is proved to originate mainly from the intensified phonon scattering by the GaAs nanoinclusions and interfaces between the GaAs and BTS matrix. As a result, a maximum ZT = 1.19 (similar to 372 K) and an average ZT(ave) = 1.01 (at T = 300-550 K) are reached in the composite sample with 0.3 wt % GaAs nanoinclusions, which are respectively similar to 78% and similar to 82% larger than those of the BTS matrix in this study, demonstrating that incorporation of the GaAs nanophase is an effective way to improve TE performance of BTS.
WOS关键词NANOCOMPOSITES ; NANOCOMPOSITES ; SCATTERING ; SCATTERING
资助项目Natural Science Foundation of China[11674322] ; Natural Science Foundation of China[11674322] ; Natural Science Foundation of China[51672278] ; Natural Science Foundation of China[51672278] ; Natural Science Foundation of China[51972307] ; Natural Science Foundation of China[51972307]
WOS研究方向Science & Technology - Other Topics ; Science & Technology - Other Topics ; Materials Science ; Materials Science
语种英语 ; 英语
WOS记录号WOS:000563074900033 ; WOS:000563074900033
出版者AMER CHEMICAL SOC ; AMER CHEMICAL SOC
资助机构Natural Science Foundation of China ; Natural Science Foundation of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/70628]  
专题中国科学院合肥物质科学研究院
通讯作者Li, Di; Qin, Xiaoying; Zhang, Jian
作者单位1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Natl Univ Def Technol, State Key Lab Pulsed Power Laser Technol, Hefei 230037, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Jinhua,Ming, Hongwei,Li, Di,et al. Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions, Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions[J]. ACS APPLIED MATERIALS & INTERFACES, ACS APPLIED MATERIALS & INTERFACES,2020, 2020,12, 12.
APA Zhang, Jinhua.,Ming, Hongwei.,Li, Di.,Qin, Xiaoying.,Zhang, Jian.,...&Wang, Ling.(2020).Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions.ACS APPLIED MATERIALS & INTERFACES,12.
MLA Zhang, Jinhua,et al."Ultralow Thermal Conductivity and High Thermoelectric Performance of N-type Bi2Te2.7Se0.3-Based Composites Incorporated with GaAs Nanoinclusions".ACS APPLIED MATERIALS & INTERFACES 12(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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