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A FinFET with one atomic layer channel

文献类型：期刊论文

作者Chen, Mao-Lin2,3; Sun, Xingdan2,3,9; Liu, Hang4,9; Wang, Hanwen2,3; Zhu, Qianbing2,3; Wang, Shasha5; Du, Haifeng5; Dong, Baojuan6; Zhang, Jing7; Sun, Yun3
刊名NATURE COMMUNICATIONS
出版日期2020-03-05
卷号11
ISSN号2041-1723
DOI10.1038/s41467-020-15096-0
通讯作者Liu, Song(liusong@hnu.edu.cn) ; Sun, Dong-Ming(dmsun@imr.ac.cn) ; Han, Zheng(vitto.han@gmail.com)
英文摘要Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W-fin) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W-fin seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching similar to 10(7). Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.
WOS关键词NANOTUBE ; TRANSISTORS
资助项目National Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2017YFA0206302] ; National Key R&D Program of China[2016YFB0401104] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[51627801] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Research Program of Frontier Sciences CAS[ZDBS-LY-JSC027] ; NSFC[21705036] ; NSFC[21975067] ; NSFC[51272256] ; NSFC[61422406] ; NSFC[61574143] ; Natural Science Foundation of Hunan Province, China[2018JJ3035] ; Guangdong Project of R&D Plan in Key Areas[2019B010934001] ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices[KF201816]
WOS研究方向Science & Technology - Other Topics
语种英语
WOS记录号WOS:000543997700011
出版者NATURE PUBLISHING GROUP
资助机构National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Strategic Priority Research Program of Chinese Academy of Sciences ; Key Research Program of Frontier Sciences CAS ; NSFC ; Natural Science Foundation of Hunan Province, China ; Guangdong Project of R&D Plan in Key Areas ; Program of State Key Laboratory of Quantum Optics and Quantum Optics Devices
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/94792]  
专题中国科学院合肥物质科学研究院
通讯作者Liu, Song; Sun, Dong-Ming; Han, Zheng
作者单位1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
3.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China
4.Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemobiosensing & Chemometr, Inst Chem Biol & Nanomed, Changsha 410082, Peoples R China
5.Chinese Acad Sci, High Field Magnet Lab, Anhui Key Lab Condensed Matter Phys Extreme Condi, Hefei, Anhui, Peoples R China
6.Univ Sci & Technol China, Chinese Acad Sci CAS, Hefei, Anhui, Peoples R China
7.Shanxi Univ, Inst Opto Elect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan 030006, Peoples R China
8.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
9.Univ Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
推荐引用方式
GB/T 7714		 Chen, Mao-Lin,Sun, Xingdan,Liu, Hang,et al. A FinFET with one atomic layer channel[J]. NATURE COMMUNICATIONS,2020,11.
APA Chen, Mao-Lin.,Sun, Xingdan.,Liu, Hang.,Wang, Hanwen.,Zhu, Qianbing.,...&Han, Zheng.(2020).A FinFET with one atomic layer channel.NATURE COMMUNICATIONS,11.
MLA Chen, Mao-Lin,et al."A FinFET with one atomic layer channel".NATURE COMMUNICATIONS 11(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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