Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation
文献类型：期刊论文
| 作者 | Xiao, Dezhi1; Ruan, Qingdong1; Liu, Liangliang1; Shen, Jie2 ; Cheng, Cheng2; Chu, Paul K.1
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| 刊名 | SURFACE & COATINGS TECHNOLOGY
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| 出版日期 | 2020-10-25 |
| 卷号 | 400 |
| 关键词 | GaN Plasma etching Inductively-coupled plasma Field coupling Uniformity Plasma simulation |
| ISSN号 | 0257-8972 |
| DOI | 10.1016/j.surfcoat.2020.126252 |
| 通讯作者 | Chu, Paul K.(paul.chu@cityu.edu.hk) |
| 英文摘要 | GaN-based semiconductor devices such as LEDs and power electronic devices are widely used but device fabrication can be further optimized by improving the uniformity and throughput. In inductively-coupled plasma (ICP) etching, the coil can be optimized to produce a tunable plasma distribution to improve the etching uniformity. Different from planar coils, the dual spiral decreases the electric field and magnetic field coupling between the inner and outer coils by enlarging the space without changing the equipment. The vertically arranged coils in each group can independently control plasma generation in the separate zone and tunable etching uniformity can be achieved by varying the power supplied to the inner and outer coils. The etching uniformity is improved from 5.83% to 2.95% based on maximum-minus-minimum (M-N) calculation and from 3.93% to 1.42% with the average value calculated by using the optimized coil structure. Plasma simulation and experiments confirm the source of etching non-uniformity and the knowledge is important to the fabrication of GaN-based and other devices, especially large-scale industrial production requiring low cost and 450 mm wafer capability. |
| WOS关键词 | INDUCTIVELY-COUPLED PLASMA ; FLUID SIMULATION ; DISCHARGE |
| 资助项目 | National Natural Science Foundation of China[51777206] ; City University of Hong Kong Strategic Research Grant (SRG)[7005105] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000566384800037 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science Foundation of China ; City University of Hong Kong Strategic Research Grant (SRG) |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/102895]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Chu, Paul K. |
| 作者单位 | 1.City Univ Hong Kong, Dept Phys, Dept Mat Sci & Engn, Dept Biomed Engn,Kowloon, Tat Chee Ave, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, Dezhi,Ruan, Qingdong,Liu, Liangliang,et al. Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation[J]. SURFACE & COATINGS TECHNOLOGY,2020,400. |
| APA | Xiao, Dezhi,Ruan, Qingdong,Liu, Liangliang,Shen, Jie,Cheng, Cheng,&Chu, Paul K..(2020).Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation.SURFACE & COATINGS TECHNOLOGY,400. |
| MLA | Xiao, Dezhi,et al."Improvement of GaN plasma etching uniformity by optimizing the coil electrode with plasma simulation and experimental validation".SURFACE & COATINGS TECHNOLOGY 400(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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