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Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy

文献类型：期刊论文

作者Bilal, Muhammad1,4; Xu, Wen2,3,4; Wang, Chao1,4; Wen, Hua1,4; Zhao, Xinnian1,4; Song, Dan1,4; Ding, Lan2,3
刊名NANOMATERIALS
出版日期2020-04-01
卷号10
关键词monolayer hexagonal boron nitride chemical vapor deposition terahertz time domain spectroscopy
DOI10.3390/nano10040762
通讯作者Xu, Wen(wenxu_issp@aliyun.com)
英文摘要Monolayer (ML) hexagonal boron nitride (hBN) is an important material in making, e.g., deep ultraviolet optoelectronic and power devices and van der Waals heterojunctions in combination with other two-dimensional (2D) electronic systems such as graphene and ML MoS2. In this work, we present a comparative study of the basic optoelectronic properties of low resistance ML hBN placed on different substrates such as SiO2/Si, quartz, PET, and sapphire. The measurement is carried out by using terahertz (THz) time-domain spectroscopy (TDS) in a temperature regime from 80 to 280 K. We find that the real and imaginary parts of the optical conductivity obtained experimentally for low resistance ML hBN on different substrates can fit well to the Drude-Smith formula. Thus, we are able to determine optically the key sample and material parameters (e.g., the electronic relaxation time or mobility, the carrier density, the electronic localization factor, etc.) of ML hBN. The effect of temperature on these parameters is also examined and analyzed. The results obtained from this study enable us to suggest the appropriate substrate for ML hBN based electronic and optoelectronic devices. This work is relevant to the application to a newly developed 2D electronic system as advanced electronic and optoelectronic materials.
WOS关键词CONDUCTIVITY ; GRAPHENE ; GROWTH ; GAP
资助项目National Natural Science Foundation of China[U1930116] ; National Natural Science Foundation of China[U1832153] ; National Natural Science Foundation of China[11574319] ; Center of Science and Technology of Hefei Academy of Science[2016FXZY002]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000539577200165
出版者MDPI
资助机构National Natural Science Foundation of China ; Center of Science and Technology of Hefei Academy of Science
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/103023]  
专题中国科学院合肥物质科学研究院
通讯作者Xu, Wen
作者单位1.Univ Sci & Technol China, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230026, Peoples R China
2.Yunnan Univ, Sch Phys & Astron, Kunming 650091, Yunnan, Peoples R China
3.Yunnan Univ, Yunnan Key Lab Quantum Informat, Kunming 650091, Yunnan, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Bilal, Muhammad,Xu, Wen,Wang, Chao,et al. Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy[J]. NANOMATERIALS,2020,10.
APA Bilal, Muhammad.,Xu, Wen.,Wang, Chao.,Wen, Hua.,Zhao, Xinnian.,...&Ding, Lan.(2020).Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy.NANOMATERIALS,10.
MLA Bilal, Muhammad,et al."Optoelectronic Properties of Monolayer Hexagonal Boron Nitride on Different Substrates Measured by Terahertz Time-Domain Spectroscopy".NANOMATERIALS 10(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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