Terahertz optical Hall effect in monolayer MoS2 in the presence of proximity-induced interactions
文献类型：期刊论文
| 作者 | Zhao, X. N.2,3; Xu, W.2,4,5; Xiao, Y. M.4,5; Liu, J.4,5; Van Duppen, B.1; Peeters, F. M.1,4,5 |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2020-06-08 |
| 卷号 | 101 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.101.245412 |
| 通讯作者 | Xu, W.(wenxu_issp@aliyun.com) |
| 英文摘要 | The effect of proximity-induced interactions such as Rashba spin-orbit coupling (SOC) and exchange interaction on the electronic and optical properties of n-type monolayer (ML) MoS2 is investigated. We predict and demonstrate that the Rashba SOC can induce an in-plane spin splitting with terahertz (THz) energy, while the exchange interaction lifts the energy degeneracy in different valleys. Thus, spin polarization can be achieved in an n-type ML MoS2 and valley Hall or optical Hall effect can be observed using linearly polarized THz radiation. In such a case, the transverse optical conductivity sigma(xy) (omega) results from spin-flip transition within spin-split conduction bands and from the fact that contributions from electrons with different spin orientations in different valleys can no longer be canceled out. Interestingly, we find that for fixed effective Zeeman field (or exchange interaction) the lowest spin-split conduction band in ML MoS2 can be tuned from one in the K valley to another one in the K' valley by varying the Rashba parameter lambda(R). Therefore, by changing lambda(R) we can turn the sign of the spin polarization and Im sigma(xy) (omega) from positive to negative. Moreover, we find that the dominant contribution of the selection rules to sigma(xx)(omega) is from electrons in the K valley and to sigma(xy) (omega) is from electrons in the K' valley. These important and interesting theoretical findings can be helpful to experimental observation of the optical Hall effect in valleytronic systems using linearly polarized THz radiation fields. |
| WOS关键词 | VALLEY ; SPIN ; CONDUCTIVITY ; DYNAMICS ; LAYER |
| 资助项目 | National Natural Science Foundation of China[U1930116] ; National Natural Science Foundation of China[U1832153] ; National Natural Science Foundation of China[11574319] ; Center of Science and Technology of Hefei Academy of Science[2016FXZY002] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000538715500011 |
| 出版者 | AMER PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China ; Center of Science and Technology of Hefei Academy of Science |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/103055]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Xu, W. |
| 作者单位 | 1.Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Chinese Univ Sci & Technol, Hefei 230026, Peoples R China 4.Yunnan Univ, Sch Phys & Astron, Kunming 650091, Yunnan, Peoples R China 5.Yunnan Univ, Yunnan Key Lab Quantum Informat, Kunming 650091, Yunnan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, X. N.,Xu, W.,Xiao, Y. M.,et al. Terahertz optical Hall effect in monolayer MoS2 in the presence of proximity-induced interactions[J]. PHYSICAL REVIEW B,2020,101. |
| APA | Zhao, X. N.,Xu, W.,Xiao, Y. M.,Liu, J.,Van Duppen, B.,&Peeters, F. M..(2020).Terahertz optical Hall effect in monolayer MoS2 in the presence of proximity-induced interactions.PHYSICAL REVIEW B,101. |
| MLA | Zhao, X. N.,et al."Terahertz optical Hall effect in monolayer MoS2 in the presence of proximity-induced interactions".PHYSICAL REVIEW B 101(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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