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Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering

文献类型：期刊论文

作者Ming, Hongwei2,3; Zhu, Chen2,3; Qin, Xiaoying3; Zhang, Jian3; Li, Di3; Zhang, Baoli3; Chen, Tao2,3; Li, Jimin2,3; Lou, Xunuo1; Xin, Hongxin3
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2020-04-29
卷号12
关键词thermoelectric properties Cu2SnSe3 thermal conductivity band structure modification energy dependent carrier scattering
ISSN号1944-8244
DOI10.1021/acsami.0c04298
通讯作者Qin, Xiaoying(xyqin@issp.ac.cn) ; Zhang, Jian(zhangjian@issp.ac.cn) ; Li, Di(lidi@issp.ac.cn)
英文摘要As an ecofriendly thermoelectric material with intrinsic low thermal conductivity, ternary diamond-like Cu2SnSe3 (CSS) has attracted much attention. Nevertheless, its figure of merit, ZT, is limited by its small thermopower (S) and power factor (PF). Here, we show that an increase in thermopower by 63% and a carrier-mobility rise of 81% at 300 K can be simultaneously achieved through 5% substitution of Fe for Sn due to both enhancement of electronic density of states and degeneracy of multiple valence band maxima, which lead to high PF = 10.3 mu W.cm(-1). K-2 at 823 K for Fe-doped CSS (CSFS). Besides, an ultrahigh PF of 14.8 mu W.cm(-1). K-2 (at 773 K) and 45% reduction of lattice thermal conductivity (at 823 K) are realized for CSFS-based composites with 0.125 wt % of MgO nanoinclusions, owing to further enhancement of S via energy-dependent scattering and strong phonon scattering by the embedded nanoparticles. Consequently, a maximum ZT = 1 at 823 K is reached for the CSFS/f MgO composite samples with f = 0.125 wt %, which is around 2.5 times larger than that of the CSS compound.
WOS关键词ENHANCED THERMOELECTRIC PERFORMANCE ; THERMAL-CONDUCTIVITY ; POLYCRYSTALLINE SNSE ; COMPOSITES ; EFFICIENCY ; PHASE ; POWER ; SE
资助项目National Natural Science Foundation of China[51672278] ; National Natural Science Foundation of China[11674322] ; National Natural Science Foundation of China[51972307]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000529924800048
出版者AMER CHEMICAL SOC
资助机构National Natural Science Foundation of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/103253]  
专题中国科学院合肥物质科学研究院
通讯作者Qin, Xiaoying; Zhang, Jian; Li, Di
作者单位1.Nanjing Univ Sci & Technol, MIT Key Lab Adv Met & Intermetall Mat Technol, Nanjing 210094, Peoples R China
2.Univ Sci & Technol China, Hefei 230026, Peoples R China
3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Ming, Hongwei,Zhu, Chen,Qin, Xiaoying,et al. Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12.
APA Ming, Hongwei.,Zhu, Chen.,Qin, Xiaoying.,Zhang, Jian.,Li, Di.,...&Xin, Hongxin.(2020).Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering.ACS APPLIED MATERIALS & INTERFACES,12.
MLA Ming, Hongwei,et al."Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering".ACS APPLIED MATERIALS & INTERFACES 12(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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