Solution processed W-doped In2O3 thin films with high carrier mobility
文献类型：期刊论文
| 作者 | Liu, Yanqiu1,3; Zhu, Shunjin1,3; Wei, Renhuai1 ; Hu, Ling1; Tang, Xianwu1; Yang, Jie1; Song, Wenhai1; Dai, Jianming1; Zhu, Xuebin1; Sun, Yuping1,2
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| 刊名 | CERAMICS INTERNATIONAL
 |
| 出版日期 | 2020-02-01 |
| 卷号 | 46 |
| 关键词 | W-doped In2O3 Chemical solution deposition Thin film |
| ISSN号 | 0272-8842 |
| DOI | 10.1016/j.ceramint.2019.09.201 |
| 通讯作者 | Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn) |
| 英文摘要 | Transparent conducting (TC) donor-doped In2O3 thin films are the critical components in photovoltaic, display and solid-state lighting fields. In2O3 -based TC films with high carrier mobility are required for reducing the power consumption of devices. Meanwhile, a high near-infrared (NIR) transparency can significantly improve the power conversion efficiency in solar cells. Here, W-doped In2O3 thin films with high carrier mobility and NIR transparency were obtained through a facile solution process, which is suitable for large-scale thin film fabrication. The effects of W concentration (0.3 at% to 0.7 at%) on the microstructures, electrical and optical properties of In2O3 thin films are investigated in detail. It is found that the 0.5% W-doped In2O3 thin film exhibits high carrier mobility of 23 cm(2)V(-1) s(-1) at a carrier concentration of 5.02 x 10(20) cm(-3), showing a high NIR transmittance over 82% and low sheet resistance of 32 Omega/sq. The solution processed W-doped In2O3 thin films with low sheet resistance and high NIR transparency can be potentially used as transparent electrodes for solar cells. |
| WOS关键词 | ELECTRICAL-PROPERTIES ; OPTICAL-PROPERTIES ; TRANSPARENT ; TEMPERATURE ; TRANSPORT ; TUNGSTEN ; DEPENDENCE ; DEPOSITION ; GROWTH |
| 资助项目 | National Natural Science Foundation of China[11604337] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000527383100106 |
| 出版者 | ELSEVIER SCI LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/103365]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Wei, Renhuai; Zhu, Xuebin |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Yanqiu,Zhu, Shunjin,Wei, Renhuai,et al. Solution processed W-doped In2O3 thin films with high carrier mobility[J]. CERAMICS INTERNATIONAL,2020,46. |
| APA | Liu, Yanqiu.,Zhu, Shunjin.,Wei, Renhuai.,Hu, Ling.,Tang, Xianwu.,...&Sun, Yuping.(2020).Solution processed W-doped In2O3 thin films with high carrier mobility.CERAMICS INTERNATIONAL,46. |
| MLA | Liu, Yanqiu,et al."Solution processed W-doped In2O3 thin films with high carrier mobility".CERAMICS INTERNATIONAL 46(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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