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Net versus gross erosion of silicon carbide in DIII-D divertor

文献类型：期刊论文

作者Rudakov, D. L.4; Wampler, W. R.5; Abrams, T.6; Ding, R.7; Boedo, J. A.4,6; Bringuier, S.; Bykov, I.4; Chrobak, C. P.6; Elder, J. D.8; Guo, H. Y.6
刊名PHYSICA SCRIPTA
出版日期2020
卷号T171
关键词DIII-D tokamak DiMES silicon carbide
ISSN号0031-8949
DOI10.1088/1402-4896/ab61dc
通讯作者Rudakov, D. L.(rudakov@fusion.gat.com)
英文摘要Gross and net erosion rates of silicon from silicon carbide (SiC) coatings were measured in the divertor of DIII-D under well diagnosed reactor-relevant plasma conditions. Amorphous and crystalline SiC coatings on graphite with thickness of similar to 80 nm and similar to 250 mu m, respectively, were exposed near an attached outer strike point of lower single null L-mode plasmas using the Divertor Material Evaluation System (DiMES). Plasma density and electron temperature near the center of the coatings were n(e) similar to 4 x 10(19) m(-3) and T-e similar to 23 eV. Gross erosion of Si from all samples was measured spectroscopically using the Si II 636 nm line. It was found to be a factor of similar to 4 higher for the amorphous coatings compared to the crystalline one. The thin amorphous coatings allowed measurements of net Si erosion with Rutherford backscattering. Net average Si erosion rate of similar to 3 x 10(16) cm(-2) s(-1) was measured on the amorphous coatings with toroidal extent of 1 mm, where, according to ERO code modeling, the local redeposition of Si was about 30%. Using this rate, spectroscopic measurements, measured D+ ion fluxes, and corrections from ERO-OEDGE modeling, effective SXB coefficient for the Si II 636 nm line of similar to 52 and Si sputtering yield of similar to 0.017 Si/D were calculated. Deuterium retention on SiC coatings was measured by 2.5 MeV He-3 nuclear reaction analysis at 0.5-2.5 x 10(17) atoms cm(-2), consistent with retention due to implantation into a surface undergoing net erosion.
WOS关键词CHEMICAL EROSION ; COMPOSITES ; HYDROGEN
资助项目US Department of Energy[DE-FG02-07ER54917] ; US Department of Energy[DE-FC02-04ER54698] ; US Department of Energy[DE-NA0003525] ; US Department of Energy[DE-AC52-07NA27344] ; US Department of Energy[DE-AC05-00OR22725] ; US Department of Energy[DE-SC0018423] ; National Nature Science Foundation of China[11861131010] ; National Nature Science Foundation of China[11675218]
WOS研究方向Physics
语种英语
WOS记录号WOS:000520000600064
出版者IOP PUBLISHING LTD
资助机构US Department of Energy ; National Nature Science Foundation of China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/103503]  
专题中国科学院合肥物质科学研究院
通讯作者Rudakov, D. L.
作者单位1.Sandia Natl Labs, Livermore, CA 94551 USA
2.Oak Ridge Associated Univ, Oak Ridge, TN 37830 USA
3.Oak Ridge Natl Lab, Oak Ridge, TN 37830 USA
4.Univ Calif San Diego, La Jolla, CA 92093 USA
5.Sandia Natl Labs, Albuquerque, NM 87185 USA
6.Gen Atom, San Diego, CA 92186 USA
7.Chinese Acad Sci, Inst Plasma Phys, Hefei, Peoples R China
8.Univ Toronto, Inst Aerosp Studies, Toronto, ON M3H 5T6, Canada
9.Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
推荐引用方式
GB/T 7714		 Rudakov, D. L.,Wampler, W. R.,Abrams, T.,et al. Net versus gross erosion of silicon carbide in DIII-D divertor[J]. PHYSICA SCRIPTA,2020,T171.
APA Rudakov, D. L..,Wampler, W. R..,Abrams, T..,Ding, R..,Boedo, J. A..,...&Watkins, J. G..(2020).Net versus gross erosion of silicon carbide in DIII-D divertor.PHYSICA SCRIPTA,T171.
MLA Rudakov, D. L.,et al."Net versus gross erosion of silicon carbide in DIII-D divertor".PHYSICA SCRIPTA T171(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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