Sub-nanosecond memristor based on ferroelectric tunnel junction
文献类型：期刊论文
| 作者 | Ma, Chao2,4; Luo, Zhen2,4; Huang, Weichuan2,4; Zhao, Letian2,4; Chen, Qiaoling2,4; Lin, Yue2,4; Liu, Xiang2,4; Chen, Zhiwei2,4; Liu, Chuanchuan2,4; Sun, Haoyang2,4 |
| 刊名 | NATURE COMMUNICATIONS
 |
| 出版日期 | 2020-03-18 |
| 卷号 | 11 |
| ISSN号 | 2041-1723 |
| DOI | 10.1038/s41467-020-15249-1 |
| 通讯作者 | Yin, Yuewei(yyw@ustc.edu.cn) ; Li, Xiaoguang(lixg@ustc.edu.cn) |
| 英文摘要 | Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358K, and the write current density is as low as 4x10(3)Acm(-2). The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems. Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions. |
| WOS关键词 | MEMORY ; ELECTRORESISTANCE ; FIELD |
| 资助项目 | National Natural Science Foundation of China[51790491] ; National Natural Science Foundation of China[51622209] ; National Natural Science Foundation of China[21521001] ; National Natural Science Foundation of China[51972296] ; National Key Research and Development Program of China[2016YFA0300103] ; National Key Research and Development Program of China[2019YFA0307900] |
| WOS研究方向 | Science & Technology - Other Topics |
| 语种 | 英语 |
| 出版者 | NATURE PUBLISHING GROUP |
| WOS记录号 | WOS:000522032300016 |
| 资助机构 | National Natural Science Foundation of China ; National Key Research and Development Program of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/103583]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Yin, Yuewei; Li, Xiaoguang |
| 作者单位 | 1.Collaborat Innovat Ctr Adv Microstruct, Nanjing, Peoples R China 2.Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei, Peoples R China 4.Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, Chao,Luo, Zhen,Huang, Weichuan,et al. Sub-nanosecond memristor based on ferroelectric tunnel junction[J]. NATURE COMMUNICATIONS,2020,11. |
| APA | Ma, Chao.,Luo, Zhen.,Huang, Weichuan.,Zhao, Letian.,Chen, Qiaoling.,...&Li, Xiaoguang.(2020).Sub-nanosecond memristor based on ferroelectric tunnel junction.NATURE COMMUNICATIONS,11. |
| MLA | Ma, Chao,et al."Sub-nanosecond memristor based on ferroelectric tunnel junction".NATURE COMMUNICATIONS 11(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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