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Backward Diode Rectifying Behavior in AgCrO2/In2O3

文献类型：期刊论文

作者Li, Chenhui1,4; Yang, Bingbing4,5; Wei, Renhuai4; Hu, Ling4; Tang, Xianwu4; Yang, Jie4; Zhu, Xuebin4; Sun, Yuping2,3,4
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2020-04-01
卷号41
关键词Backward diode delafossite In2O3 transparent
ISSN号0741-3106
DOI10.1109/LED.2020.2975005
通讯作者Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要A backward diode consisting of all nondegenerate and transparent semiconducting oxides (TSOs) offers promising opportunities for designing multifunctional electronic devices. In this letter, we report the backward diode rectifying behavior in the nondegenerate AgCrO2/In2O3 p-n heterojunction. Both AgCrO2 and In2O3 films are transparent. The decrease of grain boundary in the In2O3 film can improve the backward diode rectifying performance. The optimized AgCrO2/In2O3 heterojunction exhibits a very high reverse rectification ratio that exceeds 10(3) along with a small tunneling current onset voltage. The backward diode rectifying behavior originates from the electron band-to-band tunneling (BTBT) current in the reverse voltage region, which is induced by type-III band alignment. This study will pave the way for achieving transparent backward diodes by using all nondegenerate TSOs p-n heterojunctions.
WOS关键词FILMS
资助项目National Natural Science Foundation of China[11604337] ; Key Laboratory of Photovoltaic and Energy Conservation Materials
WOS研究方向Engineering
语种英语
WOS记录号WOS:000522206300004
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
资助机构National Natural Science Foundation of China ; Key Laboratory of Photovoltaic and Energy Conservation Materials
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/103633]  
专题中国科学院合肥物质科学研究院
通讯作者Wei, Renhuai; Zhu, Xuebin
作者单位1.Univ Sci & Technol China, Sci Isl Branch, Grad Sch, Hefei 230026, Peoples R China
2.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
4.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
5.Auhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China
推荐引用方式
GB/T 7714		 Li, Chenhui,Yang, Bingbing,Wei, Renhuai,et al. Backward Diode Rectifying Behavior in AgCrO2/In2O3[J]. IEEE ELECTRON DEVICE LETTERS,2020,41.
APA Li, Chenhui.,Yang, Bingbing.,Wei, Renhuai.,Hu, Ling.,Tang, Xianwu.,...&Sun, Yuping.(2020).Backward Diode Rectifying Behavior in AgCrO2/In2O3.IEEE ELECTRON DEVICE LETTERS,41.
MLA Li, Chenhui,et al."Backward Diode Rectifying Behavior in AgCrO2/In2O3".IEEE ELECTRON DEVICE LETTERS 41(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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