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Defects controlled doping and electrical transport in TiS2 single crystals

文献类型：期刊论文

作者Chen, Ke4,5; Song, Meng4,5; Sun, Yi-Yang6; Xu, Hai7,8; Qi, Dong-Chen1,9; Su, Zhenhuang3; Gao, Xingyu3; Xu, Qian3; Hu, Jun2; Zhu, Junfa2
刊名APPLIED PHYSICS LETTERS
出版日期2020-03-23
卷号116
ISSN号0003-6951
DOI10.1063/5.0005170
通讯作者Cao, Liang(lcao@hmfl.ac.cn) ; Han, Yuyan(yyhan@hmfl.ac.cn) ; Xiong, Yimin(yxiong@hmfl.ac.cn)
英文摘要TiS2 has been intensively studied as an electrode material and a thermoelectric material for energy storage and conversion applications due to its high electrical conductivity. Understanding the influence of defects on electrical transport is of importance not only to resolve the long-standing question concerning the nature of TiS2, but also for the rational design of TiS2 based devices for energy scavenging applications. In this study, we integrate photoemission spectroscopy, Raman spectroscopy, and electrical transport measurements to determine the chemical compositions dominated by defects and their influence on the doping and electrical properties. Our results demonstrate that TiS2 is a heavily self-doped semiconductor with the Fermi level close to the conduction band, which serves as the conclusive experimental evidence regarding the semiconducting nature of TiS2. The doping effect is sensitive to the (subtle) changes in the chemical composition. The electron donation from the Ti interstitials (Ti-i) to the TiS2 host explains the high carrier concentration. The Ti Frenkel pair (Ti-F) acting as the acceptor is responsible for the decrease in the electron carrier concentration and electrical conductivity. High conductivity maintains upon partial oxidization, indicating the oxidization-tolerance in terms of the electronic structure. Our results provide valuable insight into the evolution of electronic properties modulated by defects that reveal unambiguously the self-doped semiconducting nature of TiS2 and chemical- and environment-tolerance of TiS2 as an advanced energy scavenging material.
WOS关键词NANOSHEETS ; CONDUCTIVITY ; SCATTERING ; XPS
资助项目National Key Research and Development Program of China[2016YFA0300404] ; National Key Research and Development Program of China[2017YFA0402900] ; National Key Research and Development Program of China[2017YFA0403402] ; National Key Research and Development Program of China[2017YFA0403403] ; National Natural Science Foundation of China (NSFC)[11474288] ; National Natural Science Foundation of China (NSFC)[11574317] ; National Natural Science Foundation of China (NSFC)[11774341] ; National Natural Science Foundation of China (NSFC)[11774365] ; National Natural Science Foundation of China (NSFC)[U1732272] ; National Natural Science Foundation of China (NSFC)[21872131] ; National Natural Science Foundation of China (NSFC)[11874358] ; National Natural Science Foundation of China (NSFC)[11604344] ; Collaborative Innovation Program of Hefei Science Center, CAS ; Australian Research Council[FT160100207] ; Hundred Talents Program of the Chinese Academy of Sciences ; High Magnetic Field Laboratory of Anhui Province
WOS研究方向Physics
语种英语
WOS记录号WOS:000522034900001
出版者AMER INST PHYSICS
资助机构National Key Research and Development Program of China ; National Natural Science Foundation of China (NSFC) ; Collaborative Innovation Program of Hefei Science Center, CAS ; Australian Research Council ; Hundred Talents Program of the Chinese Academy of Sciences ; High Magnetic Field Laboratory of Anhui Province
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/103641]  
专题中国科学院合肥物质科学研究院
通讯作者Cao, Liang; Han, Yuyan; Xiong, Yimin
作者单位1.Queensland Univ Technol, Sch Chem & Phys, Brisbane, Qld 4001, Australia
2.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Peoples R China
3.Chinese Acad Sci, Shanghai Adv Res Inst, Zhangjiang Lab, SSRF, 239 Zhangheng Rd, Shanghai 201204, Peoples R China
4.Chinese Acad Sci, High Field Magnet Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Anhui, Peoples R China
5.Univ Sci & Technol China, Hefei 230026, Anhui, Peoples R China
6.Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 201899, Peoples R China
7.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China
8.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
9.Queensland Univ Technol, Ctr Mat Sci, Brisbane, Qld 4001, Australia
推荐引用方式
GB/T 7714		 Chen, Ke,Song, Meng,Sun, Yi-Yang,et al. Defects controlled doping and electrical transport in TiS2 single crystals[J]. APPLIED PHYSICS LETTERS,2020,116.
APA Chen, Ke.,Song, Meng.,Sun, Yi-Yang.,Xu, Hai.,Qi, Dong-Chen.,...&Xiong, Yimin.(2020).Defects controlled doping and electrical transport in TiS2 single crystals.APPLIED PHYSICS LETTERS,116.
MLA Chen, Ke,et al."Defects controlled doping and electrical transport in TiS2 single crystals".APPLIED PHYSICS LETTERS 116(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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