Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak
文献类型:期刊论文
作者 | Liu, Cheng-Yue1,2; Wu, Bin1![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | CHINESE PHYSICS B
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出版日期 | 2020 |
卷号 | 29 |
关键词 | plasma current ramp-up China Fusion Engineering Test Reactor tokamak simulation code volt-second consumption |
ISSN号 | 1674-1056 |
DOI | 10.1088/1674-1056/ab610d |
通讯作者 | Guo, Yong(yguo@ipp.ac.cn) |
英文摘要 | The plasma current ramp-up is an important process for tokamak discharge, which directly affects the quality of the plasma and the system resources such as volt-second consumption and plasma current profile. The China Fusion Engineering Test Reactor (CFETR) ramp-up discharge is predicted with the tokamak simulation code (TSC). The main plasma parameters, the plasma configuration evolution and coil current evolution are given out. At the same time, the volt-second consumption during CFETR ramp-up is analyzed for different plasma shaping times and different plasma current ramp rates dI(P)/dt with/without assisted heating. The results show that the earlier shaping time and the faster plasma current ramp rate with auxiliary heating will enable the volt-second to save 5%-10%. At the same time, the system ability to provide the volt-second is probably 470 V.s. These simulations will give some reference to engineering design for CFETR to some degree. |
WOS关键词 | OHMIC DISCHARGES |
资助项目 | National Key Research and Development Program of China[2017YFE0300500] ; National Key Research and Development Program of China[2017YFE0300501] ; National Natural Science Foundation of China[11875290] ; National Natural Science Foundation of China[11875253] ; Fundamental Research Funds for the Central Universities of China[WK3420000004] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000526963100001 |
出版者 | IOP PUBLISHING LTD |
资助机构 | National Key Research and Development Program of China ; National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities of China |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/103649] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Guo, Yong |
作者单位 | 1.Chinese Acad Sci, Inst Plasma Phys, Hefei 230026, Peoples R China 2.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Phys Dept, Hefei 230601, Peoples R China 3.Univ Sci & Technol China, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Cheng-Yue,Wu, Bin,Qian, Jin-Ping,et al. Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak[J]. CHINESE PHYSICS B,2020,29. |
APA | Liu, Cheng-Yue.,Wu, Bin.,Qian, Jin-Ping.,Li, Guo-Qiang.,Hou, Ya-Wei.,...&Guo, Yong.(2020).Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak.CHINESE PHYSICS B,29. |
MLA | Liu, Cheng-Yue,et al."Discharge simulation and volt-second consumption analysis during ramp-up on the CFETR tokamak".CHINESE PHYSICS B 29(2020). |
入库方式: OAI收割
来源:合肥物质科学研究院
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