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Nonlinear diffusion potential induced anti-ohmic effect

文献类型：期刊论文

作者Wang, Shuanhu1; Tian, Yingyi1; Guo, Huixin1; Li, Shuqin1; Zeeshan, Hafiz Muhammad; Zhao, Yang1; Wang, Jianyuan1; Zou, Lvkuan2; Jin, Kexin1
刊名JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期2020-04-29
卷号53
关键词novel transport behavior anti-ohmic effect diffusion current Schottky junction lateral photovoltage
ISSN号0022-3727
DOI10.1088/1361-6463/ab7621
通讯作者Wang, Shuanhu(shwang2015@nwpu.edu.cn) ; Jin, Kexin(jinkx@nwpu.edu.cn)
英文摘要Novel transport behavior of carriers always generates new types of electronic elements. For traditional resistor element, the voltage is directly proportional to drift current regardless of Joule heat, which can be credibly described by Ohm's law. There are still some new types of materials such as memristor and Weyl metal that do not follow Ohm's law, and they have drawn significant attention. In this work, we theoretically and experimentally investigated the transport behavior of diffusion current near the interface of the silicon-based Schottky junction. It is clearly observed that the output voltage in the diffusion path could be higher (lower) when the resistance was lower (higher), even under identical diffused current. Deep theoretical analysis is also carried out, which is found to be in good agreement with the experimental results. These results suggest that the transport behavior of diffusion carriers is quite different from the drift carriers. This study may provide a foundation for fundamental research and device application based on the transport of diffusion carriers near the interface.
WOS关键词MAGNETORESISTANCE ; RESISTIVITY ; LAW
资助项目National Natural Science Foundation of China[11604265] ; National Natural Science Foundation of China[51872241] ; National Natural Science Foundation of China[51572222] ; Fundamental Research Funds for the Central Universities[3102018zy044] ; Fundamental Research Funds for the Central Universities[310201911cx044]
WOS研究方向Physics
语种英语
WOS记录号WOS:000518945900001
出版者IOP PUBLISHING LTD
资助机构National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/103841]  
专题中国科学院合肥物质科学研究院
通讯作者Wang, Shuanhu; Jin, Kexin
作者单位1.Northwestern Polytech Univ, Sch Sci, Shanxi Key Lab Condensed Matter Struct & Properti, Xian 710072, Peoples R China
2.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Shuanhu,Tian, Yingyi,Guo, Huixin,et al. Nonlinear diffusion potential induced anti-ohmic effect[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2020,53.
APA Wang, Shuanhu.,Tian, Yingyi.,Guo, Huixin.,Li, Shuqin.,Zeeshan, Hafiz Muhammad.,...&Jin, Kexin.(2020).Nonlinear diffusion potential induced anti-ohmic effect.JOURNAL OF PHYSICS D-APPLIED PHYSICS,53.
MLA Wang, Shuanhu,et al."Nonlinear diffusion potential induced anti-ohmic effect".JOURNAL OF PHYSICS D-APPLIED PHYSICS 53(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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