Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
文献类型：期刊论文
| 作者 | Hui, Zhenzhen3; Zuo, Xuzhong1; Ye, Longqiang3; Wang, Xuchun3; Zhu, Xuebin2
|
| 刊名 | MATERIALS
 |
| 出版日期 | 2020-01-02 |
| 卷号 | 13 |
| 关键词 | chromium nitride thin films thickness-dependent electrical transport properties chemical solution deposition |
| DOI | 10.3390/ma13020417 |
| 通讯作者 | Hui, Zhenzhen(huizz@ahstu.edu.cn) |
| 英文摘要 | Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5-350 K, all samples exhibited semiconductor-like properties with d rho/dT < 0. For the range above and below the Neel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10(-2) K-1 at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness. |
| WOS关键词 | GRAIN-GROWTH ; TEMPERATURE SENSOR ; MAGNETIC-FIELDS ; MAGNETORESISTANCE ; RESISTANCE ; TRANSITION ; BEHAVIOR |
| 资助项目 | National Natural Science Foundation of China[11804003] ; National Natural Science Foundation of China[51702002] ; Natural Science Foundation of Anhui Province[1808085QE141] ; Anhui Science and Technology University[HCYJ201705] ; Science and the Technology Major Project of Anhui Province[18030901087] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000515499900164 |
| 出版者 | MDPI |
| 资助机构 | National Natural Science Foundation of China ; Natural Science Foundation of Anhui Province ; Anhui Science and Technology University ; Science and the Technology Major Project of Anhui Province |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/103959]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Hui, Zhenzhen |
| 作者单位 | 1.Anhui Sci & Technol Univ, Coll Elect & Elect Engn, Fengyang 233100, Peoples R China 2.Univ Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Anhui Sci & Technol Univ, Coll Chem & Mat Engn, Fengyang 233100, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hui, Zhenzhen,Zuo, Xuzhong,Ye, Longqiang,et al. Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties[J]. MATERIALS,2020,13. |
| APA | Hui, Zhenzhen,Zuo, Xuzhong,Ye, Longqiang,Wang, Xuchun,&Zhu, Xuebin.(2020).Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties.MATERIALS,13. |
| MLA | Hui, Zhenzhen,et al."Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties".MATERIALS 13(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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