Helium ion penetration in sputtering cathode materials: A crucial process for the helium treatment of oxide thin films
文献类型：期刊论文
| 作者 | Wang, Haoru1; Xie, Xiangnan1; Lin, Guankai1; Wang, Yongqiang2; Tong, Wei2 ; Zhu, Hong1,3
|
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2020-11-01 |
| 卷号 | 713 |
| 关键词 | Lanthanide calcium manganite Thin films Helium ion penetration Electronic transport Magnetic properties |
| ISSN号 | 0040-6090 |
| DOI | 10.1016/j.tsf.2020.138339 |
| 通讯作者 | Zhu, Hong(zhuh@ustc.edu.cn) |
| 英文摘要 | We previously reported that out-of-plane lattice of in-plane tensile strained (001) La0.7Ca0.3MnO3 thin films can be stretched by He treatment of the films via adding helium gas in an Ar/O-2 mixed sputtering atmosphere. To gain more insight into the He treatment process, in this study, we carried out He plasma treatment on a target and He atom adsorption on a substrate surface respectively before/between sputtering deposition of La0.7Ca0.3MnO3 films. The films deposited after the target pre-treatment show remarkable changes in the out-of-plane lattice and magnetotransport properties, while the films deposited through the latter method changes only slightly, suggesting that the He+ ion penetration in the cathode target plays a key role in the He treatment of the manganite films. Furthermore, we placed the as-grown films at the cathode position and exposed them directly to He discharge plasma. After the He plasma post-treatment, the out-of-plane lattice parameter increases from 3.823 to 3.851 angstrom, accompanied by an increase in the metal-insulator transition temperature from 260 to 290 K. The results demonstrate that the He plasma treatment is a simple strategy for the single-axis control of epitaxial thin films. |
| WOS关键词 | COLOSSAL MAGNETORESISTANCE |
| 资助项目 | National Natural Science Foundation of China[11674298] ; National Key Research and Development Program of China[2017YFA0403502] |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000580899700006 |
| 出版者 | ELSEVIER SCIENCE SA |
| 资助机构 | National Natural Science Foundation of China ; National Key Research and Development Program of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/104654]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Zhu, Hong |
| 作者单位 | 1.Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Chinese Acad Sci, Key Lab Strongly Coupled Quantum Matter Phys, 96 Jinzhai Rd, Hefei 230026, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Haoru,Xie, Xiangnan,Lin, Guankai,et al. Helium ion penetration in sputtering cathode materials: A crucial process for the helium treatment of oxide thin films[J]. THIN SOLID FILMS,2020,713. |
| APA | Wang, Haoru,Xie, Xiangnan,Lin, Guankai,Wang, Yongqiang,Tong, Wei,&Zhu, Hong.(2020).Helium ion penetration in sputtering cathode materials: A crucial process for the helium treatment of oxide thin films.THIN SOLID FILMS,713. |
| MLA | Wang, Haoru,et al."Helium ion penetration in sputtering cathode materials: A crucial process for the helium treatment of oxide thin films".THIN SOLID FILMS 713(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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