Design strategy for p-type transparent conducting oxides
文献类型：期刊论文
| 作者 | Hu, L.3 ; Wei, R. H.3; Tang, X. W.3; Lu, W. J.3; Zhu, X. B.3; Sun, Y. P.1,2,3
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| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2020-10-14 |
| 卷号 | 128 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/5.0023656 |
| 通讯作者 | Zhu, X. B.(xbzhu@issp.ac.cn) ; Sun, Y. P.(ypsun@issp.ac.cn) |
| 英文摘要 | Transparent conducting oxides (TCOs), combining the mutually exclusive functionalities of high electrical conductivity and high optical transparency, lie at the center of a wide range of technological applications. The current design strategy for n-type TCOs, making wide bandgap oxides conducting through degenerately doping, obtains successful achievements. However, the performances of p-type TCOs lag far behind the n-type counterparts, primarily owing to the localized nature of the O 2 p-derived valence band (VB). Modulation of the VB to reduce the localization is a key issue to explore p-type TCOs. This Perspective provides a brief overview of recent progress in the field of design strategy for p-type TCOs. First, the introduction to principle physics of TCOs is presented. Second, the design strategy for n-type TCOs is introduced. Then, the design strategy based on the concept of chemical modulation of the valence band for p-type TCOs is described. Finally, through the introduction of electron correlation in strongly correlated oxides for exploring p-type TCOs, the performance of p-type TCOs can be remarkably improved. The design strategy of electron correlation for p-type TCOs could be regarded as a promising material design approach toward the comparable performance of n-type TCOs. |
| WOS关键词 | ELECTRONIC-STRUCTURE ; THIN-FILMS ; BAND-STRUCTURE ; NIO ; FABRICATION ; CR2O3 ; SEMICONDUCTORS ; MOBILITY ; SPECTRA ; LIMITS |
| 资助项目 | Joint Funds of the National Natural Science Foundation of China (NNSFC) ; Chinese Academy of Sciences Large-Scale Scientific Facility[U1532149] ; National Key R&D Program of China[2017YFA0403600] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000582071900002 |
| 资助机构 | Joint Funds of the National Natural Science Foundation of China (NNSFC) ; Chinese Academy of Sciences Large-Scale Scientific Facility ; National Key R&D Program of China |
| 源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/104657]  |
| 专题 | 中国科学院合肥物质科学研究院 |
| 通讯作者 | Zhu, X. B.; Sun, Y. P. |
| 作者单位 | 1.Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, HFIPS, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, L.,Wei, R. H.,Tang, X. W.,et al. Design strategy for p-type transparent conducting oxides[J]. JOURNAL OF APPLIED PHYSICS,2020,128. |
| APA | Hu, L.,Wei, R. H.,Tang, X. W.,Lu, W. J.,Zhu, X. B.,&Sun, Y. P..(2020).Design strategy for p-type transparent conducting oxides.JOURNAL OF APPLIED PHYSICS,128. |
| MLA | Hu, L.,et al."Design strategy for p-type transparent conducting oxides".JOURNAL OF APPLIED PHYSICS 128(2020). |
入库方式： OAI收割
来源：合肥物质科学研究院
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