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Layer-dependent SERS enhancement of TiS2 prepared by simple electrochemical intercalation

文献类型：期刊论文

作者Weng, Chaocang3,5; Luo, Yuanyuan4,5; Wang, Bingfang4,5; Shi, Jianping1,3; Gao, Lei5; Cao, Zhenyu3,5; Duan, Guotao2
刊名JOURNAL OF MATERIALS CHEMISTRY C
出版日期2020-10-28
卷号8
ISSN号2050-7526
DOI10.1039/d0tc03683h
通讯作者Luo, Yuanyuan(yyluo@issp.ac.cn) ; Shi, Jianping(jps51062@ahnu.edu.cn) ; Duan, Guotao(duangt@hust.edu.cn)
英文摘要In recent years, transition metal dichalcogenides (TMDs) have received much attention due to their excellent electrical and optical properties. TiS2 is a kind of layered transition metal dichalcogenide, and with the decrease of the number of layers, the transition from an indirect band gap to a direct band gap will occur, leading to novel electrical and optical properties. In this work, TiS2 with different numbers of layers was obtained by simplifying the electrochemical intercalation experiment and the influence of the deposition current and the number of layers on the SERS activity of TiS2 was studied. It was found that when the current was 0.25 mA cm(-2), the SERS activity of TiS2 was enhanced greatly with the decrease of the number of layers. Compared with that of the layered bulk TiS2, the Raman enhancement factor of the few-layer TiS2 increased by 2 orders of magnitude to 3.18 x 10(5), and the detection limit to R6G was as low as 10(-8) M. Such TiS2 with different layers has been developed for SERS detection and exhibits excellent SERS activity. This was mainly due to the increase in the charge transfer efficiency between the substrate and the organic molecules as the number of layers decreased. This work not only expands the application of TiS2 with few layers as an active SERS substrate, but also provides an effective method to improve the SERS activity of TMDs.
WOS关键词TRANSITION-METAL DICHALCOGENIDES ; RAMAN-SCATTERING ; HETEROSTRUCTURE ; NANOSTRUCTURES ; COPPER
资助项目National Key R&D Program of China[2019YFB2006002] ; National Natural Science Foundation of China[11674320] ; National Natural Science Foundation of China[61775002] ; Key Research Projects of the Frontier Science CAS[QYZDB-SSW-JSC017] ; Open Fund of State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences[KFS-2018] ; Open Fund of State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences[KFS-2017]
WOS研究方向Materials Science ; Physics
语种英语
出版者ROYAL SOC CHEMISTRY
WOS记录号WOS:000581559100020
资助机构National Key R&D Program of China ; National Natural Science Foundation of China ; Key Research Projects of the Frontier Science CAS ; Open Fund of State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Sciences
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/104660]  
专题中国科学院合肥物质科学研究院
通讯作者Luo, Yuanyuan; Shi, Jianping; Duan, Guotao
作者单位1.Anhui Prov Key Lab Photoelect Mat Sci & Technol, Wuhu 241000, Peoples R China
2.Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
3.Anhui Normal Univ, Coll Phys & Elect Technol, Wuhu 241000, Anhui, Peoples R China
4.Univ Sci & Technol China, Hefei 230026, Peoples R China
5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanotechnol, Hefei 230031, Anhui, Peoples R China
推荐引用方式
GB/T 7714		 Weng, Chaocang,Luo, Yuanyuan,Wang, Bingfang,et al. Layer-dependent SERS enhancement of TiS2 prepared by simple electrochemical intercalation[J]. JOURNAL OF MATERIALS CHEMISTRY C,2020,8.
APA Weng, Chaocang.,Luo, Yuanyuan.,Wang, Bingfang.,Shi, Jianping.,Gao, Lei.,...&Duan, Guotao.(2020).Layer-dependent SERS enhancement of TiS2 prepared by simple electrochemical intercalation.JOURNAL OF MATERIALS CHEMISTRY C,8.
MLA Weng, Chaocang,et al."Layer-dependent SERS enhancement of TiS2 prepared by simple electrochemical intercalation".JOURNAL OF MATERIALS CHEMISTRY C 8(2020).

入库方式： OAI收割

来源：合肥物质科学研究院

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